Copper nitride thin films prepared by reactive radio-frequency magnetron sputtering

Nosaka, Toshikazu; Masuda, Yoshitake; Okamoto, Akio; Ogawa, Soichi; Nakayama, Yoshikazu

doi:10.1016/s0040-6090(98)01776-3

Cited by 106 publications

(80 citation statements)

References 10 publications

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“…Since the pioneer work by Terada et al 1 different methods have been applied to grow films with reasonable quality: molecular beam epitaxy, 2 atomic layer deposition, 3 pulsed laser deposition, 4,5 dc-triode sputtering, 6,7 and mostly rfmagnetron sputtering. [8][9][10][11][12][13][14] Copper nitride decomposes at relatively low temperature into metallic copper and nitrogen. This process can also be induced by irradiation with electrons and laser pulses.…”

Section: Introductionmentioning

confidence: 99%

“…Is it at interstitial lattice sites like in other 3d metals nitrides 19 or is it trapped at grain boundaries like previously suggested in literature? 13 The aim of this paper is to systematically investigate the route to the thermal decomposition of N-rich copper nitride films, to unveil the responsible physical processes and to answer some of the previously exposed open questions. For this purpose, the atomic composition, the structural, morphological and optical properties of N-rich Cu 3 N films have been characterized prior to and after annealing them in vacuum in the temperature range from 100 to 300°C by means of ion-beam analysis , x-ray diffraction, atomic force microscopy, and spectroscopic ellipsometry techniques.…”

Section: Introductionmentioning

confidence: 99%

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Thermal stability of copper nitride thin films: The role of nitrogen migration

González-Arrabal

Gordillo

Martín‐González³

et al. 2010

Journal of Applied Physics

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The atomic composition, structural, morphological, and optical properties of N-rich copper nitride thin films have been investigated prior to and after annealing them in vacuum at temperatures up to 300°C. Films were characterized by means of ion-beam analysis ͑IBMA͒, X-ray diffraction ͑XRD͒, atomic force microscopy ͑AFM͒, and spectroscopic ellipsometry techniques ͑SE͒. The data reveal that even when the total ͑integrated over the whole thickness͒ atomic composition of the films remains constant, nitrogen starts to migrate from the bulk to the film surface, without out-diffusing, at temperatures as low as 100°C. This migration leads to two chemical phases with different atomic concentration of nitrogen, lattice parameters, and crystallographic orientation but with the same crystal structure. XRD experimental and Rietveld refined data seem to confirm that nitrogen excess accommodates in interstitial locations within the anti-ReO 3 crystal lattice forming a solid solution. The influence of nitrogen migration on the optical ͑electronic͒ properties of the films will be discussed.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermal stability of copper nitride thin films: The role of nitrogen migration

González-Arrabal

Gordillo

Martín‐González³

et al. 2010

Journal of Applied Physics

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“…It is stable at 300 K, but thick films decompose at 700 K, which has been employed for maskless writing of microscopic metallic contacts 1 or write-once optical recording. [2][3][4][5] It has also been proposed that all-nitride, epitaxial, single crystal magnetic tunnel junctions consisting of Fe 4 N/Cu 3 N/Fe 4 N can be prepared simply by alternate evaporation of Fe and Cu in a flux of highly reactive N atoms. 6 This idea benefits from the fact that some iron nitrides ͓Fe 4 N ͑Refs.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic surface band bending inCu3N(100)ultrathin films

et al. 2007

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Highly homogeneous, ultrathin films of copper nitride ͑Cu 3 N͒ have been grown on Fe͑001͒ at room temperature using a Cu evaporator and a radio-frequency plasma source to obtain atomic nitrogen in a UHV environment. Cu 3 N is a semiconductor with the valence band edge at −0.65± 0.05 eV below the Fermi Level. The formation of copper nitride can be detected spectroscopically by the shape of the Cu LVV-Auger electron transition, which changes sensibly in shape and position compared to metallic Cu. Cu 3 N grows epitaxially with the substrate forming flat disklike mosaic blocks, ͑001͒ oriented. Both x-ray core level photoelectron spectroscopy and ultraviolet photoelectron spectroscopy photoemission experiments have been used to study the electronic structure. A first-principles calculation has been performed and compared with the measured spectra.

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“…There have been a number of re-ports that (100) prefer-oriented Cu 3 N tended to be formed as increasing N 2 gas contents. 9,10) Figure 1 shows the dependence of the film composition on the content of N 2 gas during the sputtering process. Stoichiometric copper nitride was reported as Cu 3 N previously.…”

Section: Copper Nitride (Cu-n) Thin Filmsmentioning

confidence: 99%

Hydrogen Implantation Effects on the Electrical and Optical Properties of Metal Nitride Thin Films

2002

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Copper and Aluminum Nitride thin films were prepared by the reactive R. F. sputtering method with controlling the N 2 gas content. Their electrical resistivity and optical bandgap energy were varied as the content of N 2 gas during the deposition. For example, the electrical resistivity of the copper nitride thin films increased from 10 −1 to 10 1 m as the nitride approaches to the stoichometric Cu 3 N. To modify the electrical and the optical properties of the nitride thin films, hydrogen was introduced by low energy ion implantation. The electrical resistivity of nearly stoichiometric Cu 3 N thin films decreased from 10 1 to 10 −4 m after hydrogen ion implantation for 30 minutes because this treatment at even 3 keV formed many irradiation defects near the surface of the Cu 3 N thin films. On the other hand, the electrical and the optical properties of insulating AlN thin films were hardly modified with the 7 h implantation. But the electrical resistivity and the optical bandgap energy of the Al rich Al-N thin films could be increased by the hydrogen ion implantation.

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Copper nitride thin films prepared by reactive radio-frequency magnetron sputtering

Cited by 106 publications

References 10 publications

Thermal stability of copper nitride thin films: The role of nitrogen migration

Thermal stability of copper nitride thin films: The role of nitrogen migration

Intrinsic surface band bending inCu3N(100)ultrathin films

Hydrogen Implantation Effects on the Electrical and Optical Properties of Metal Nitride Thin Films

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