2018
DOI: 10.1016/j.tsf.2017.10.042
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Copper nitride layers synthesized by pulsed magnetron sputtering

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Cited by 23 publications
(12 citation statements)
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“…Modulation frequency, which is one of parameters of PMS process, allows for significant changes to be made in morphology and growth rate of thin films synthesized using this technique through the modification of plasma composition and the manner of how the energy is delivered to the substrate. Plasma composition is directly related to the modulation frequency and as such allows for better control of the synthesis process which leads to extending material design possibilities as has been reported for Cu-N films [11]. Obtained structures were either clearly columnar or exhibited a more fine-grained structure.…”
Section: Discussionmentioning
confidence: 74%
“…Modulation frequency, which is one of parameters of PMS process, allows for significant changes to be made in morphology and growth rate of thin films synthesized using this technique through the modification of plasma composition and the manner of how the energy is delivered to the substrate. Plasma composition is directly related to the modulation frequency and as such allows for better control of the synthesis process which leads to extending material design possibilities as has been reported for Cu-N films [11]. Obtained structures were either clearly columnar or exhibited a more fine-grained structure.…”
Section: Discussionmentioning
confidence: 74%
“…The practical range of synthesis of such materials is very narrow and difficult to observe. On the basis of our previous studies [10][11][12], plasma surface engineering could be used to synthesize the metastable Cu 3 N material with reduced thermal activation. In the pulsed magnetron sputtering (PMS) method, the synthesis process is implemented in a pulsed manner, which enables it to be substituted for different forms of energy during synthesis.…”
Section: Introductionmentioning
confidence: 99%
“…The XRD test pattern of different MoS2 sputtering power composite Cu3N films is shown in Figure 1. The films had the crystallization peaks of Cu3N and MoS2, of which the 2θ values of 23.3°, 33.1°, and 47.6° corresponded to Cu3N (100), (110), and (200) crystal faces, respectively [52,53]. The peak of 2θ = 62.02° corresponded to the MoS2 (107) crystal plane.…”
Section: Resultsmentioning
confidence: 99%