Copper Loss Reduction in Planar Transformer for LLC Resonant Converter Using Interleaved Winding

Shimura, Kazuhiro; Satou, Mituhide; Matsumoto, Tsutomu

doi:10.14243/jsaem.28.128

Cited by 2 publications

(2 citation statements)

References 8 publications

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“…It has also been reported that the proximity effect in the primary winding is reduced by the magnetic flux generated in the secondary winding (24) . When the secondary winding current is much smaller than the primary winding current, the proximity effect is more pronounced than in the other conditions, and thus the primary winding resistance is considered to be larger than in the other conditions.…”

Section: 7mentioning

confidence: 95%

Improvement of Efficiency in Bidirectional DC-DC Converter with Dual Active Bridge Using GaN-HEMT

2023

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A prototype bidirectional isolated DC-DC converter with an output of 3.6 kW, using GaN-HEMTs, employing a planar transformer and operating at a maximum frequency of 400 kHz, was developed and evaluated. Typical circuits for bidirectional isolated DC-DC converters are the LLC resonant converter and the dual active bridge (DAB), both of which have the disadvantage of low efficiency at light loads. In this paper, GaN-HEMTs were used as a rectifier device to reduce DAB losses with natural commutation under light loads, utilizing their no reverse recovery loss characteristics. Zero-voltage switching was achieved using the transformer excitation current as a lagging phase current on the input side. As a result of the efficiency comparison between the LLC resonant converter and DAB under the same components and input/output conditions, higher efficiency was obtained in DAB under most conditions. The maximum efficiency was 98.6%.

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Section: 7mentioning

confidence: 95%

Improvement of Efficiency in Bidirectional DC-DC Converter with Dual Active Bridge Using GaN-HEMT

2023

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“…(2) The influence of voltage waveform on loss The switching loss of GaN device is related to the voltage waveform. In general, the switching loss is proportional to the rise time and fall time of the switching voltage [6]. Therefore, when analyzing the loss of GaN devices, the influence of voltage waveform on the switching loss should be considered [6].…”

Section: Loss Analysis Of Gan Devicesmentioning

confidence: 99%

Loss analysis and reduction strategy of GaN devices in high frequency buck converter

Wang,

Wu,

Pan

et al. 2024

ACE

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In this paper, the loss analysis and reduction strategy of gallium nitride (GaN) devices in high frequency buck converter are studied. To solve this problem, this paper adopts the methods of establishing the loss model of GaN device, putting forward the guiding principle of reducing the loss theoretically and verifying the experiment.The main achievements of this paper include: Firstly, through analyzing the loss mechanism of GaN devices, it is found that the factors affecting the loss of GaN devices include switching frequency, current waveform, temperature, etc. Secondly, the loss model of GaN device is established, which can quantitatively analyze the loss of GaN device. Then, the guiding principles of reducing the loss are put forward theoretically, including optimizing the current path, choosing the appropriate switching frequency, adopting the correct driving technology, and carrying out the effective temperature management and thermal design. Finally, the effectiveness and feasibility of these strategies are verified by experiments.

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Copper Loss Reduction in Planar Transformer for LLC Resonant Converter Using Interleaved Winding

Cited by 2 publications

References 8 publications

Improvement of Efficiency in Bidirectional DC-DC Converter with Dual Active Bridge Using GaN-HEMT

Improvement of Efficiency in Bidirectional DC-DC Converter with Dual Active Bridge Using GaN-HEMT

Loss analysis and reduction strategy of GaN devices in high frequency buck converter

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