1993
DOI: 10.1016/0927-0248(93)90074-d
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Copper indium diselenide thin film solar cells fabricated on flexible foil substrates

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Cited by 53 publications
(15 citation statements)
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“…In 1993, the Advanced Industrial Science and Technology Institute (AIST) in Japan adopted an electron beam evaporation process followed by selenization to achieve the purpose of depositing an absorber layer on a flexible molybdenum foil, and the developed flexible solar cell has an efficiency of 8.3% [12]. In 1995, the National Renewable Energy Laboratory (NREL) embedded gallium into the CIS matrix to increase the band gap, open circuit voltage and fill factor of the absorber, thereby a highly efficient CIGS cell based on molybdenum coated alkali lime glass substrate was developed, and the reported efficiency is 17.1% [13].…”
Section: Research Progressmentioning
confidence: 99%
“…In 1993, the Advanced Industrial Science and Technology Institute (AIST) in Japan adopted an electron beam evaporation process followed by selenization to achieve the purpose of depositing an absorber layer on a flexible molybdenum foil, and the developed flexible solar cell has an efficiency of 8.3% [12]. In 1995, the National Renewable Energy Laboratory (NREL) embedded gallium into the CIS matrix to increase the band gap, open circuit voltage and fill factor of the absorber, thereby a highly efficient CIGS cell based on molybdenum coated alkali lime glass substrate was developed, and the reported efficiency is 17.1% [13].…”
Section: Research Progressmentioning
confidence: 99%
“…For flexible solar cells, Mo, Ti, and Al foils were first tested by International Solar Electric Technology (ISET, Chatsworth, CA) in 1992. The ab sorber was grown using an e-beam evaporation process with sub sequent selenization, and only the best efficiency on Mo (S.3%) was reported [42]. In 2003, ISET reported an efficiency of 11.7% on a Mo foil using an ink-based method [49].…”
Section: Flexible Substrate Materials and Devicesmentioning
confidence: 99%
“…The transparent conductive oxide for the CIS devices was ZnO which was formed by MOCVD techniques to a nominal thickness of 1 pm to 1.8 pn by ISET [7]. Resistivity of the films typically were in the 2 x lQ3 Q-cm range.…”
Section: Transparent Conductive Oxidementioning
confidence: 99%