Copper gallium selenide thin films on Si by magnetron sputtering for photovoltaic applications: Composition, junction formation and metal contacts

Awaah, M. A.; Mohammed, Hamza M.; Akpa, Okechukwu; Awaah, Isibhakhomen; Isaac-Smith, T.; Korivi, Naga S.; Posthill, J. B.; Das, Kalyan Kumar

doi:10.1080/23311916.2018.1514941

Cited by 4 publications

(3 citation statements)

References 11 publications

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“…Due to their stoichiometry-dependent characteristics, copper gallium selenide (CGS) semiconductor thin films are useful for a variety of optoelectronic devices. According to a number of studies, CGS shows p-type region regardless of fluctuations in its stoichiometry that are explained by the doping-pinning rule [10]. CGS generally has a bandgap that ranges from around 1.0 eV to 1.7 eV.…”

Section: Introductionmentioning

confidence: 99%

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Absorber layer improvement and performance analysis of CIGS thin-film solar cell

Khamis,

Rodzi,

Naharuddin

2024

JOR

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CIGS has shown significant potential for cost-effective and efficient photovoltaic applications, with efficiency often exceeding 20%. However, further improvements in cell performance are needed to reduce production costs. Thus, this study proposes an ultra-thin structure for CIGS solar cells by modifying the absorber layer thickness and composition. SCAPS software was used to evaluate the performance of the proposed design, such as open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF%), and conversion efficiency (ŋ%). Results showed that ultra-thin solar cells with the proposed GnP and CGS absorber layers are ideal due to their greater ŋ%, 25.33%.

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Section: Introductionmentioning

confidence: 99%

“…It is possible to adjust the bandgap to maximise sunlight absorption by adjusting the copper, gallium, and selenium ratio [11]. Copper gallium selenide (CuGaSe 2 , CGS), one of these compounds, has an energy gap of 1.68 eV at ambient temperature and is anticipated to be a potential component for red-light emitting devices [10].…”

Section: Introductionmentioning

confidence: 99%

Absorber layer improvement and performance analysis of CIGS thin-film solar cell

Khamis,

Rodzi,

Naharuddin

2024

JOR

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“…Research is naturally also devoted to uncover ways to further improve the efficiency of the CuGaSe 2 -based photovoltaic cells (see, e.g., reviews 6 and 13). Many research groups fo-cus on film deposition and growth methods [14,15,16,17], the importance of this cannot be overstated. Indeed, the efficiency of a cell is greatly impacted by the presence of defects and impurities in the various material layers in the cell and at their interfaces.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of defects at $\Sigma3$ grain boundaries in CuGaSe$_2$

Saniz,

bekaert,

Partoens

et al. 2021

Preprint

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We present a first-principles computational study of cation-Se Σ3 (112) grain boundaries in CuGaSe 2 . We discuss the structure of these grain boundaries, as well as the effect of native defects and Na impurities on their electronic properties. The formation energies show that the defects will tend to form preferentially at the grain boundaries, rather than in the grain interiors. We find that in Ga-rich growth conditions Cu vacancies as well as Ga at Cu and Cu at Ga antisites are mainly responsible for having the equilibrium Fermi level pinned toward the middle of the gap, resulting in carrier depletion. The Na at Cu impurity in its +1 charge state contributes to this. In Ga-poor growth conditions, on the other hand, the formation energies of Cu vacancies and Ga at Cu antisites are comparatively too high for any significant influence on carrier density or on the equilibrium Fermi level position. Thus, under these conditions, the Cu at Ga antisites give rise to a p-type grain boundary. Also, their formation energy is lower than the formation energy of Na at Cu impurities. Thus, the latter will fail to act as a hole barrier preventing recombination at the grain boundary, in contrast to what occurs in CuInSe 2 grain boundaries. We also discuss the effect of the defects on the electronic properties of bulk CuGaSe 2 , which we assume reflect the properties of the grain interiors.

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Origin of electrical contact resistance and its dominating effect on electrical conductivity in PbTe/CoSb3 composite

Kosonowski

Kumar

Wolski

et al. 2022

Journal of the European Ceramic Society

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Copper gallium selenide thin films on Si by magnetron sputtering for photovoltaic applications: Composition, junction formation and metal contacts

Cited by 4 publications

References 11 publications

Absorber layer improvement and performance analysis of CIGS thin-film solar cell

Absorber layer improvement and performance analysis of CIGS thin-film solar cell

First-principles study of defects at $\Sigma3$ grain boundaries in CuGaSe$_2$

Origin of electrical contact resistance and its dominating effect on electrical conductivity in PbTe/CoSb3 composite

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