Copper Electroplating for On‐Chip Metallization

Dubin, Valery M.

doi:10.1002/9781119963677.ch5

Cited by 2 publications

(4 citation statements)

References 72 publications

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“…One can see that in the case of materials with terminal methyl groups (C35 and C45) the films porosity increases with the template (Brij 30) concentration. The principal feature of the films with alkyl bridge (4,8,12) is appearance of pronounced hysteresis loop in their isotherms. In the case of thin films, the adsorption branch reflects the size of internal voids while the desorption curve reflects the size of interconnecting necks.…”

Section: Resultsmentioning

confidence: 99%

“…18), whose structure contains silicon-oxygen network with terminal methyl groups (Samples Nos: C35, C45, see Table I). Brij 30 (C 12 H 25 (OCH 2 OCH 2 ) 4 OH with molar mass 362 g/mole, Sigma-Aldrich) was used as a surfactant to obtain porous structure by a self-assembly process. 19 In the next group of samples (No: 4, 8, 12, see Table I), a part of Si-O bonds in silicon oxide network was replaced by Si-ethylene bonds.…”

Section: Methodsmentioning

confidence: 99%

“…Then copper should fill the patterns in the dielectric film by superfilling electrodeposition and after chemicalmechanical polishing (CMP) forms one level of metallization structure where the deposited Cu wires are isolated by low-k dielectric. 4 This technology is an additive technique and termed as damascene technology. However, the plasma patterning of low-k dielectrics is becoming a big challenge.…”

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confidence: 99%

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Effect of Bridging and Terminal Alkyl Groups on Structural and Mechanical Properties of Porous Organosilicate Films

Nenashev

Wang

Liu

et al. 2017

ECS J. Solid State Sci. Technol.

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Chemical composition, pore structure and mechanical properties of porous organosilicate low-k films with terminal and bridging organic groups are studied. It is shown that BTMSE based low-k films with alkyl bridge between the Si atoms have non-uniform pore structure with internal voids (ink-bottle like pores) while the films with terminal alkyl groups have pores with cylindrical shape. All studied spin-on deposited films have better mechanical properties than PECVD films with similar chemical composition and porosity. The best mechanical properties showed alkyl bridged low-k films. Moreover, the Young's modulus increases with BTMSE content because of higher concentration of bridging bonds. Porous organosilicate glasses (OSG) have many different applications such as catalysts, adsorbents, trapping agents, drug delivery agents, stationary phases in chromatography and chemical sensors. 1One of the most important applications of porous OSG films is related to interconnects in advanced ULSI (ultra large-scale integration) devices where they are used as insulators with low dielectric constant. Modern ICs can be made very compact, incorporating up to several billions transistors and other electronic components in an area of about 1 cm 2 . All transistors and other IC components have to be electrically interconnected to provide the proper functionality. The width of the conducting lines that connect different transistors in a circuit is becoming very small; in 2008, it dropped below 100 nm, and now is of the order of a few tens of nm. In parallel, the interconnect delay is becoming an increasing limitation factor of the overall signal propagation delay. The low dielectric constant materials are needed to reduce capacitance (C) between the metal (Cu) conductors. Together with low resistivity (R) of metal wires, low-k materials improve ULSI device performance by decreasing RC delay, cross talk noise and power consumption in interconnects.2 Different types of organosilicate films deposited by plasma enhanced chemical vapor deposition (PECVD) and spin-on glass (SOG) technology have been developed during the last 20 years. Using of appropriate precursors allows to control the chemical composition and porosity of these films. PECVD is currently the method of choice in microelectronic industry because this technique is easily integrated in the existing device manufacturing process.3 PECVD precursors (normally different types of organosilanes) are transferred to the reaction chamber where Si wafer is located on a heated pedestal. Quality of the deposited films depends on plasma characteristics and pedestal temperature. In the modern interconnect technology, the dielectric layer is deposited by PECVD and patterned first before the metal deposition using lithography and plasma etching. Lithography and plasma etching define the structure of interconnect wiring by forming certain patterns in the dielectric film. Then copper should fill the patterns in the dielectric film by superfilling electrodeposition and after chemicalmechanica...

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

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Effect of Bridging and Terminal Alkyl Groups on Structural and Mechanical Properties of Porous Organosilicate Films

Nenashev

Wang

Liu

et al. 2017

ECS J. Solid State Sci. Technol.

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show abstract

“…By scanning with an atomic force microscope (AFM) of the selective layer after the chemical mechanical planarization (CMP) process it is found that the surface of the oxide layer is removed at different rates depending on the depth of removal and the pH of the solution. CMP is a material removal and surface smoothing process, which is possible by the combination of chemical and mechanical interactions [4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Ilie

Ipate

2017

Lubricants

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This paper provides a tribochemical study of the selective layer surface by chemical mechanical planarization (CMP). CMP is used to remove excess material obtained in the process of selective transfer. The paper aims at a better understanding of the planarization (polishing) and micromachining. The planarization becomes effective if the material removal rate (MRR) is optimal and the surface defects are minimal. The pH of the slurry plays a very important role in removing the selective layer by CMP, and hydrogen peroxide (H 2 O 2 ) is the most common oxidizer used in CMP slurry. The purpose of this paper is the analysis of the pH effect on the etching rate (ER) and on the behavior of selective layer polishing by a constant concentration of H 2 O 2 and the influence of nanoparticles size and concentration on selective layer surface CMP. The nanoparticle size used is 250 nm. The MRR results through CMP and ER have been shown to be influenced by the presence of oxides on the selective layer surface and have been found to vary with the slurry pH at constant H 2 O 2 concentrations. The CMP slurry plays an important role in the CMP process performance and should be monitored for optimum results and minimal surface defects. The paper analyzes the impact of chemical-mechanical, inter-nanoparticle, and pad-nanoparticle-substrate interactions on CMP performance, taking into account the state of friction at the interface, by measuring the friction force. Selective layer CMP optimization studies were required to control the chemical and mechanical interactions at the interface between the slurry and the selective layer, the slurry chemistry, the properties, and the stability of the suspended abrasive nanoparticles.

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Copper Electroplating for On‐Chip Metallization

Cited by 2 publications

References 72 publications

Effect of Bridging and Terminal Alkyl Groups on Structural and Mechanical Properties of Porous Organosilicate Films

Effect of Bridging and Terminal Alkyl Groups on Structural and Mechanical Properties of Porous Organosilicate Films

Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

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