Copper Electrodeposition: Principles and Recent Progress

Reid, Jonathan D.

doi:10.1143/jjap.40.2650

Cited by 148 publications

(116 citation statements)

References 11 publications

(14 reference statements)

Supporting

Mentioning

116

Contrasting

Order By: Relevance

“…This is due to the directional deposition of PVD, which results in a "bottom void" during trench filling. 4 Moreover, the coverage of the seed layer becomes worse by the damage in the acidic plating electrolyte. The native Cu oxide formed on the seed layer is dissolved in the acidic electrolyte, resulting in defects in the seed layer.…”

Section: -8mentioning

confidence: 99%

“…The native Cu oxide formed on the seed layer is dissolved in the acidic electrolyte, resulting in defects in the seed layer. 4,[8][9][10] Martyak and Ricou 2 observed seed layer damage in a sulfuric-acid-based electrolyte by applying 100 A/cm 2 of anodic current on the seed layer. Before adopting methods such as atomic layer deposition and electroless plating in the seed layer fabrication, seed layer repair has been suggested as a bridge between PVD and the methods mentioned.…”

mentioning

confidence: 99%

“…The sharp increase in the sheet resistance after 200 s indicates that the seed layer became physically discontinuous. It is easily considered that the damage is caused by the dissolution of the native Cu oxide on the seed layer, as shown in the following reaction 4,9 CuO + 2H + → Cu 2+ + H 2 O ͓1͔ …”

mentioning

confidence: 99%

See 2 more Smart Citations

A Study on Seed Damage in Plating Electrolyte and Its Repairing in Cu Damascene Metallization

Cho

Lim

Lee

et al. 2010

J. Electrochem. Soc.

View full text Add to dashboard Cite

In this study, we observed the changes in the film properties of a Cu seed layer with its damage and repair. The immersion of the Cu seed layer in a sulfuric-acid-based plating electrolyte can result in damage to the Cu seed layer by the dissolution of the native Cu oxide and corrosion of Cu, leading to defects in the subsequent electrodeposited layer. The damaged seed layer was repaired using electroless plating. Cu re-covered the surface and the crystal structure of the seed layer was rebuilt and, finally, the filling characteristic was improved into superfilling in Cu electroplating for the damascene process. Electroless repairing, however, increased the seed roughness due to the low nucleation on the exposed barrier surface and the accompanying three-dimensional Cu growth. To refine the repairing process by inducing the nucleation on the barrier surface, Sn-Pd activation was adopted before the repair, and it reduced the surface roughness and improved the continuity of the seed layer effectively. © 2010 The Electrochemical Society. ͓DOI: 10.1149/1.3291985͔ All rights reserved.Manuscript submitted October 27, 2009; revised manuscript received December 11, 2009. Published February 9, 2010 Cu electroplating has been used in the damascene process for forming interconnects in microprocessors, mainly due to the superior capability in filling the recessed region. Generally, it requires a Cu seed layer, which provides nucleation sites for the formation of a continuous film.1,2 Additionally, it reduces the potential drop originating from its own resistance and, accordingly, prevents a higher deposition rate on the substrate near the points electrically connected to the electron supplier for electroplating.3,4 Moreover, the nature of the seed layer affects the resistivity, crystallinity, and adhesion of the electrodeposit. 5-8In submicrometer technology generations, the Cu seed layer is usually deposited using a physical vapor deposition ͑PVD͒ method. As the trench width decreases to the tens of nanometers range, it becomes more difficult to obtain a continuous and conformal seed layer on the trench wall, especially at the trench base. This is due to the directional deposition of PVD, which results in a "bottom void" during trench filling. 4 Moreover, the coverage of the seed layer becomes worse by the damage in the acidic plating electrolyte. The native Cu oxide formed on the seed layer is dissolved in the acidic electrolyte, resulting in defects in the seed layer. 4,[8][9][10] Martyak and Ricou 2 observed seed layer damage in a sulfuric-acid-based electrolyte by applying 100 A/cm 2 of anodic current on the seed layer. Before adopting methods such as atomic layer deposition and electroless plating in the seed layer fabrication, seed layer repair has been suggested as a bridge between PVD and the methods mentioned. Seed layer repair is a technique that improves the continuity of the seed layer by connecting sparse parts of Cu seed through the addition of a few Cu layers. Electroless plating, 11 alkaline-based electropl...

show abstract

Section: -8mentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

A Study on Seed Damage in Plating Electrolyte and Its Repairing in Cu Damascene Metallization

Cho

Lim

Lee

et al. 2010

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…2,3) A Cu filling process using electroplating is therefore needed to produce low-resistance, highly reliable Cu interconnects. Electroplating in comparison with electroless plating can provide higher deposition rate as well as electroplating solutions for copper deposition are more stable and easier to control.…”

Section: Introductionmentioning

confidence: 99%

Filling a Narrow and High Aspect-Ratio Trench with Electro-Cu Plating

Chonan

Komiyama

Onuki³

et al. 2006

Mater. Trans.

View full text Add to dashboard Cite

Copper electroplating has been used for making interconnections in large-scale integration (LSI). Sub-100-nm-wide, deep trenches with aspect-ratios over 6 were fully filled by optimizing DC and pulse electroplating processes. Grain sizes of Cu of sub-100-nm wide trenches after electroplating were 70 nm for DC electroplating and 58 nm for pulse electroplating. The Cu grain sizes of Cu interconnects by DC plating after electroplating increased with the annealing temperature.

show abstract

“…Locally crowded accelerator in the trench enhances the deposition rate and makes the superfilling. [8][9][10] Some organic accelerators, for example, 3-mercapto-1-propane-sulfonic acid ͑MPSA͒, 8,[11][12][13] bis͑3-sulfopropyl͒ disulfide, disodium salt ͑SPS͒, 9,10,12,14,15 and 3-N,N-dimethylaminodithiocarbamoyl-1-propanesulfonic acid ͑DPS͒ 16 are known as superfilling-capable accelerators. In Ag electroplating, there has been little research about accelerators.…”

mentioning

confidence: 99%

Acceleration Effect of CuCN in Ag Electroplating for Ultralarge-Scale Interconnects

Cho

Lee

Kim

et al. 2007

Electrochem. Solid-State Lett.

View full text Add to dashboard Cite

The addition of CuCN accelerated the deposition rate in cyanide-based Ag electroplating. The catalytic effect came from the high-order complexation of Cu with the free CN − ions in electrolyte. It changed the equilibrium state of the electrolyte, presented as an increase in the amount of Ag͑CN͒ 2 − compared to Ag͑CN͒ 3 2− . Because Ag͑CN͒ 2 − could be reduced more easily, Ag electroplating was accelerated. Fourier transform infrared analysis showed the equilibrium change with the increase in Ag͑CN͒ 2 − peak according to the CuCN addition. For superfilling, it is necessary to localize the complexation on the Cu surface.

show abstract

Copper Electrodeposition: Principles and Recent Progress

Cited by 148 publications

References 11 publications

A Study on Seed Damage in Plating Electrolyte and Its Repairing in Cu Damascene Metallization

A Study on Seed Damage in Plating Electrolyte and Its Repairing in Cu Damascene Metallization

Filling a Narrow and High Aspect-Ratio Trench with Electro-Cu Plating

Acceleration Effect of CuCN in Ag Electroplating for Ultralarge-Scale Interconnects

Contact Info

Product

Resources

About