Copper blocking ability of nitrogen-incorporated silicon oxide film

Takeda, Ken’ichi; Ryuzaki, Daisuke; Mine, T.; Hinode, K.; Yoneyama, Ryo

doi:10.1116/1.1587141

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Cu Recovery Of Optimized Low-temperature Out-diffusion (Olto...1

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“…The initial diffusion of those atoms is fast and then slows down due to clustering. 2,[64][65][66][67][68][69][70] Another factor affecting Ni out-diffusion behavior is the surface charge condition of wafers, 54,[71][72][73][74][75][76][77][78][79][80][81] which can be significantly impacted by different cleaning procedures.…”

Section: Cu Recovery Of Optimized Low-temperature Out-diffusion (Olto...mentioning

confidence: 99%

Test Methods for Measuring Bulk Copper and Nickel in Heavily Doped p-Type Silicon Wafers

Fabry¹,

Hoelzl²,

Andrukhiv

et al. 2006

J. Electrochem. Soc.

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The goal of this work was to optimize the existing test methods for measuring bulk copper and nickel impurities in the heavily doped p-type silicon wafers and to assess their sensitivity, recovery rate, and correlation. Three test methods were studied; low-temperature out-diffusion, polysilicon ultratrace profiling, and wafer digestion. The bulk copper and nickel recovery rates of low-temperature out-diffusion were improved by one order of magnitude in the concentration around 2 ϫ 10 12 atoms/cm 3 . Among the three test methods, polysilicon ultratrace profiling and wafer digestion were found to be most sensitive and the method detection limit of 5 ϫ 10 11 atoms/cm 3 or better was achieved after optimization. The optimized wafer digestion and polysilicon ultraprofiling also correlated well across six laboratories with a bias less than ±50% for both bulk copper and nickel.

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