Copper‐alloyed ZnS as a p‐type transparent conducting material

Diamond, Anthony M.; Corbellini, Luca; Kavaipatti, Balasubramaniam; Chen, Shiyou; Wang, Shuzhi; Matthews, Tyler S.; Wang, Lin‐Wang; Ramesh, R.; Ager, Joel W.

doi:10.1002/pssa.201228181

Cited by 76 publications

(56 citation statements)

References 31 publications

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“…SI), it should function as an acceptor, producing free holes. [47,56] The connectivity of the hole-conducting phase is such that conductivity is independent of temperature. Conductivity increases with increasing Cu substitution until its maximum at x = 0.30.…”

Section: Discussionmentioning

confidence: 99%

“…The films exhibited p-type conductivity and optical transparency in the visible range. [47] Here we show that Cu x Zn 1-x S films can be synthesized at room temperature by pulsed laser deposition, and investigate the structure and conductivity mechanism in greater detail. At an optimal Cu concentration of x = 0.30, the hole conductivity reaches 42 S cm -1 and the material retains high optical transparency.…”

Section: Introductionmentioning

confidence: 87%

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P‐Type Transparent Cu‐Alloyed ZnS Deposited at Room Temperature

Woods‐Robinson

Cooper

et al. 2016

Adv Elect Materials

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All transparent conducting materials (TCMs) of technological practicality are n-type; the inferior conductivity of p-type TCMs has limited their adoption. In addition, many relatively high- A decrease in lattice parameter with Cu content suggests the hole conduction is due to substitutional incorporation of Cu onto Zn sites. This hole-conducting phase is embedded in a less conducting amorphous Cu y S, which dominates at higher Cu concentrations. The combination of high hole conductivity and optical transparency for the peak conductivity Cu x Zn 1-x S films is among the best reported to date for a room temperature deposited p-type TCM.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 87%

P‐Type Transparent Cu‐Alloyed ZnS Deposited at Room Temperature

Woods‐Robinson

Cooper

et al. 2016

Adv Elect Materials

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“…Up to now, various film preparation techniques have been successfully employed to produce Cu-doped ZnS thin films such as spray pyrolysis [19], electron beam evaporation [17], chemical bath deposition [20] by a pH controlled solution synthesis technique [15,21], pulsed laser deposition [18] and thermal reaction process [10] combined with dip coating. Among these film preparation techniques, the sol-gel (a wet chemical route) dip coating has become important in both scientific and industrial fields in only for the last two decades due to its several advantages.…”

Section: Introductionmentioning

confidence: 99%

Nanostructured Cu-doped ZnS polycrystalline thin films produced by a wet chemical route: the influences of Cu doping and film thickness on the structural, optical and electrical properties

Göktaş

Aslan

Tumbul

2015

J Sol-Gel Sci Technol

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A wet chemical route was successfully employed to synthesize nanostructured Cu-doped ZnS polycrystalline thin films with Cu-doping content varying from 0 to 20 %. X-ray diffraction measurements showed that both the undoped and the Cu-doped ZnS films possess a cubic crystal structure with (111) preferential orientation with an average crystallite size between 9 and 21 nm. Scanning electron microscope exhibited the surface of the nanostructured films to be homogeneous and dense, and the grains have good connectivity with each others. Using energy-dispersive X-ray studies, the presence of Cu in the Zn-S lattice was detected, which was in agreement with the concentration of precursors and the Cu ratios initially used for starting solutions. Optical studies showed a red shifting of absorption edge and a decrease in the optical band gap value from 3.60 to 3.32 eV as the Cu content and the film thickness increased. It was also observed that the increased Cu doping and film thickness resulted in a reduction in refractive index (n), with an increment of extinction coefficient (k) values in the visible range. However, by increasing the Cu dopant from 10 to 20 % Cu, the films exhibited a decrease in electrical resistivity with improvement in crystalline quality.

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“…Indeed, several such materials have recently been synthesized and characterized. Cu-doped ZnS has also shown promising characteristics, as it was recently shown to exhibit the best reported hole conductivity and optical transparency for a room temperature-deposited p-type TCM 12,13 ; pairing this with n-doped ZnS may result in many promising device applications for photovoltaics, optoelectronics and transparent devices 14 . Traverse et al 2 enhanced the efficiency of thin film organic solar cells by introducing ZnS co-deposited with Al 2 S 3 ; they reported that the wide band gap hexagonal zinc sulfide (ZnS) (E g = 3.7 eV) can be a good alternative to conventional materials as the anodic buffer layer in OPVs and IGS-based PVs, as it can be thermally deposited in a vacuum environment.…”

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confidence: 99%

Alloying ZnS in the hexagonal phase to create high-performing transparent conducting materials

Faghaninia

Bhatt

2016

Phys. Chem. Chem. Phys.

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Alloyed zinc sulfide (ZnS) has shown promise as a relatively inexpensive and earth-abundant transparent conducting material (TCM). Though Cu-doped ZnS has been identified as a highperforming p-type TCM, the corresponding n-doped ZnS has, to date, been challenging to synthesize in a controlled manner; this is because the dopant atoms compete with hole-inducing zinc vacancies near the conduction band minimum as the most thermodynamically stable intrinsic point defects. We thus aim to identify the most promising n-type ZnS-based TCM, with the optimal combination of physical stability, transparency, and electrical conductivity. Using a new method for calculating the free energy of both the sphalerite (cubic) and wurtzite (hexagonal) phases of undoped and doped ZnS, we find that doped ZnS is more stable in the hexagonal structure. This, for the first time, fundamentally explains previous experimental observations of the coexistence of both phases in doped ZnS; hence, it profoundly impacts future work on sulfide TCMs. We also employ hybrid density functional theory calculations and a new carrier transport model, AMSET (ab initio model for mobility and Seebeck coefficient using the Boltzmann transport equation), to analyze the defect physics and electron mobility of the different cation-(B, Al, Ga, In) and anion-doped (F, Cl, Br, I) ZnS, in both the cubic and hexagonal phases, at various dopant compositions, temperatures, and carrier concentrations. Among all doped ZnS candidates, Al-doped ZnS (AZS) exhibits the highest dopant solubility, largest electronic band gap, and highest electrical conductivity of 3830, 1905, and 321 S · cm −1 , corresponding to the possible carrier concentrations of n = 10 21 , 10 20 , and 10 19 cm −3 , respectively, at the optimal 6.25% dopant concentration of Al and the temperature of 300 K.

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Copper‐alloyed ZnS as a p‐type transparent conducting material

Cited by 76 publications

References 31 publications

P‐Type Transparent Cu‐Alloyed ZnS Deposited at Room Temperature

P‐Type Transparent Cu‐Alloyed ZnS Deposited at Room Temperature

Nanostructured Cu-doped ZnS polycrystalline thin films produced by a wet chemical route: the influences of Cu doping and film thickness on the structural, optical and electrical properties

Alloying ZnS in the hexagonal phase to create high-performing transparent conducting materials

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