Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy

Sung, Ji Ho; Heo, Heeok; Si, Saerom; Kim, Yong Hyeon; Noh, Hyeong Rae; Song, Kyung; Kim, Juho; Lee, Chang‐Soo; Seo, Seung‐Young; Kim, Dong‐Hwi; Kim, Hyoung Kug; Yeom, Han Woong; Kim, Tae‐Hwan; Choi, Si‐Young; Kim, Jun Sung; Jo, Moon‐Ho

doi:10.1038/nnano.2017.161

Cited by 224 publications

(219 citation statements)

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“…The room-temperature field-effect mobility (µ) is obtained to be ∼32 cm 2 V −1 s −1 , using µ = (dIds/dVg) (L/W) (1/VdsCg), where L, W, and Cg are the channel length, channel width, and the gate capacitance per unit area, respectively. We have measured 100 FETs with different change lengths, and found that the average mobility value (in a range of 20-24 cm 2 V −1 s −1 , comparable to the reported values for exfoliated 2H MoTe2 single crystals [12][13] was independent of the channel length (Fig. 3e).…”

Section: Electrical Properties Of the Coplanar Heterophase Mote 2 Fetssupporting

confidence: 84%

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Scaling-up Atomically Thin Coplanar Semiconductor–Metal Circuitry via Phase Engineered Chemical Assembly

Liu

Han

et al. 2019

Nano Lett.

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Two-dimensional (2D) layered semiconductors, with their ultimate atomic thickness, have shown promise to scale down transistors for modern integrated circuitry. However, the electrical contacts that connect these materials with external bulky metals are usually unsatisfactory, which limits the transistor performance. Recently, contacting 2D semiconductors using coplanar 2D conductors has shown promise in reducing the problematic high resistance contacts. However, many of these methods are not ideal for scaled production.Here, we report on the large-scale, spatially controlled chemical assembly of the integrated 2H-MoTe 2 field-effect transistors (FETs) with coplanar metallic 1T′-MoTe 2 contacts via phase engineered approaches. We demonstrate that the heterophase FETs exhibit ohmic contact behavior with low contact resistance, resulting from the coplanar seamless contact between 2H and 1T′ MoTe 2 confirmed by transmission electron microscopy characterizations. The average mobility of the heterophase FETs was measured to be as high as 23 cm 2 V −1 s −1 (comparable with those of exfoliated single crystals), due to the large 2H MoTe 2 single-crystalline domain (486±187 μm). By developing a patterned growth method, we realize the 1T′ MoTe 2 gated heterophase FET array whose components of channel, gate, and contacts are all 2D materials. Finally, we transfer the heterophase device array onto a flexible substrate and demonstrate the near-infrared photoresponse with high photoresponsivity (~1.02 A/W). Our study provides a basis for the large-scale application of phase-engineered coplanar MoTe 2 semiconductors-meter structure in advanced electronics and optoelectronics.

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Section: Electrical Properties Of the Coplanar Heterophase Mote 2 Fetssupporting

confidence: 84%

“…MoTe2 is ~1.1 kΩ μm, which is about two orders of magnitude smaller than those of metal-contacted 2H-MoTe2 (reported value of 409 kΩ µm) 13 .…”

Section: Electrical Properties Of the Coplanar Heterophase Mote 2 Fetsmentioning

confidence: 60%

Scaling-up Atomically Thin Coplanar Semiconductor–Metal Circuitry via Phase Engineered Chemical Assembly

Liu

Han

et al. 2019

Nano Lett.

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“…Among the various TMD, MoTe 2 nanosheets have recently attracted remarkable attention because of their very promising electronic, photonic and optical properties [28][29][30] .…”

Section: Introductionmentioning

confidence: 99%

Mechanical responses of two-dimensional MoTe2; pristine 2H, 1T and 1T′ and 1T′/2H heterostructure

Mortazavi

Berdiyorov

Makaremi

et al. 2018

Extreme Mechanics Letters

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Transition metal dichalcogenides (TMD) are currently among the most interesting twodimensional (2D) materials due to their outstanding properties. MoTe 2 involves attractive polymorphic TMD crystals which can exist in three different 2D atomic lattices of 2H, 1T and 1T', with diverse properties, like semiconducting and metallic electronic characters.Using the polymorphic heteroepitaxy, most recently coplanar semiconductor/metal (2H/1T') few-layer MoTe 2 heterostructures were experimentally synthesized, highly promising to build circuit components for next generation nanoelectronics. Motivated by the recent experimental advances, we conducted first-principles calculations to explore the mechanical properties of single-layer MoTe 2 structures. We first studied the mechanical responses of pristine and single-layer 2H-, 1T-and 1T'-MoTe 2 . In these cases we particularly analyzed the possibility of engineering of the electronic properties of these attractive 2D structures using the biaxial or uniaxial tensile loadings. Finally, the mechanical-failure responses of 1T'/2H-MoTe 2 heterostructure were explored, which confirms the remarkable strength of this novel 2D system.

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“…Such strategies could change the morphology or component of the substrates, directly impacting the grown products. The epitaxy growth along the edges or from the grains is related to the lattice mismatch, such as the lateral 1T'-MoTe 2 /1H-MoS 2 , 1T'-MoTe 2 /2H-MoTe 2 superlattices and the multinary lateral superlattices of MoS 2 , WS 2 and WSe 2 [4][5][6]. Even so, such a dislocation driven growth is so general that it is possible to obtain other kinds of nanowires or superlattices on the basis of defects in 2D materials.…”

Section: New Designing For Nanostructured 2d Materials and 2d Superlamentioning

confidence: 99%

New designing for nanostructured 2D materials and 2D superlattices

Xiao

2017

Sci. China Mater.

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As the most remarkable candidate for the next-generation electronics, two-dimensional (2D) materials have attracted much interest. Recently in a letter in Nature Materials, Professor David A. Muller and Lain-Jong Li and their cooperators reported the direct synthesis of one-dimensional (1D) MoS 2 channels embedded in 2D WSe 2 monolayers through a dislocation-catalyzed strategy [1]. They demonstrated that 1D MoS 2 channels of subnanometer widths were formed in the second-step of a two-step chemical vapor deposition (CVD) growth of the lateral WSe 2 /MoS 2 heterostructures. The root cause lies in the exposure of the as-generated 5|7 member ring dislocations along the sharp grain boundaries or implanted in WSe 2 to the Mo and S atmosphere. Through atomic resolution annular dark-field scanning transmission electron microscopy (ADF-STEM) and molecular dynamics (MD) simulations, a conclusion was drawn that the higher reactivity in the core of the misfit dislocations induced the insertion of Mo and S atoms and such dislocations were pushed away from the ordinary dislocations to form 1D channels (Fig. 1). Moreover, a 1D MoS 2 nanowire of~1 nm long could be obtained from the periodic dislocation along the boundary of two WSe 2 grains. The work could provide with the inspiration of the synthesis of 1D channels based on the substrate of defects. That is, different channels based on 2D materials could be fabricated through chemical methods which prevent from the impurities caused by lithography. It is essential for a device to simplify the constructing process in order to reduce the introduction of impurities. According to this work, the substrate design is critical to the material fabrication.Till now, plenty of substrate-designing strategies have been generally utilized to fabricate nanostructured 2D materials or superlattices. Here, the substrates refer not only to metals, SiO 2 /Si, mica, sapphire, but also to edges, grains or even defects of 2D materials. Thus, CVD growth for the synthesis of nanostructured 2D materials and superlattices lies most on the substrate designing. There have been a series of methods to design metal or non-

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Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy

Cited by 224 publications

References 50 publications

Scaling-up Atomically Thin Coplanar Semiconductor–Metal Circuitry via Phase Engineered Chemical Assembly

Scaling-up Atomically Thin Coplanar Semiconductor–Metal Circuitry via Phase Engineered Chemical Assembly

Mechanical responses of two-dimensional MoTe2; pristine 2H, 1T and 1T′ and 1T′/2H heterostructure

New designing for nanostructured 2D materials and 2D superlattices

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