Coplanar-Microstrip Transitions for Ultra-Wideband Communications

Gibari, Mohammed El; Averty, Dominique; Lupi, Cyril; Mahé, Yann; Li, Hong Wu; Toutain, S.

doi:10.5772/16893

Cited by 2 publications

(2 citation statements)

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“…Thinner isolation layers usually increase the capacitance between the signal line and ground planes, affecting the CPW's characteristic impedance and potentially leading to new resonances. Thinner isolation layers can push the resonance peak to higher frequencies [52]. Variations in dielectric permittivity can result in dispersion effects, where the signal's phase velocity varies with frequency, thus creating additional resonance peaks in the reflection coefficient.…”

Section: Quantum Excitationmentioning

confidence: 99%

“…These changes in thickness and permittivity can cause impedance mismatches and localized electromagnetic fields that act like resonant cavities, contributing to extra resonance peaks. Substrates with lower dielectric permittivity can increase electromagnetic coupling between the signal and ground lines, potentially introducing new resonance peaks [52]. No variation in Vin led to a shift or alteration in these additional peaks.…”

Section: Quantum Excitationmentioning

confidence: 99%

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Thin Film Materials for Room Temperature Quantum Applications

Anwar,

Mahbub,

Coutu

2023

IEEE Trans. Quantum Eng.

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Thin films with quantum defects are emerging as a potential platform for quantum applications. Quantum defects in some thin films arise due to structural imperfections, such as vacancies or impurities. These defects generate localized electronic states with unique optical and electronic properties. Crystal vacancies or defects that occur when atoms are missing from a crystal lattice can influence a material's quantum properties. In this study, we investigated inexpensive, complementary metal oxide semiconductor (CMOS) compatible materials with quantum defects suitable for room temperature applications. The experiments indicated 5ns, 15ns, and 17ns relaxation times for aluminum nitride (AlN), aluminum oxide (Al2O3) or alumina, and tin oxides (SnOx), respectively. For all these materials, distinct resonant peaks are observed at approximately 1.1GHz, 1.6GHz, 2.2GHz, and 2.7GHz at room temperature (i.e., 21℃). These peaks exhibit slight frequency shifts, corresponding to known defect locations and thin film material properties. This discovery may lead the way to reliable, cost-effective quantum applications in our daily lives.INDEX TERMS MEMS; thin film; vacancy defect; bandgap; Quantum Information System (QIS)

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Section: Quantum Excitationmentioning

confidence: 99%

Section: Quantum Excitationmentioning

confidence: 99%