Coplanar High Gain Millimeter Wave Amplifier Module

Ferling, Dieter; Florjancic, M.; Gutu-Nelle, A.; Richter, H.J.; Heinrich, W.; Schmuckle, F.J.; Schlechtweg, M.

doi:10.1109/euma.1998.337987

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Millimeter Wave Amplifier Module1

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Cited by 4 publications

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“…The advantages of SIP-technology have been used for realization of a 58GHz amplifier module with a high integration density and an excellent RF-performance (Ferling et al, 1998). The module contains a single thin film multilayer substrate in coplanar technology with two SIPs realized on it (Figure 11).…”

Section: Millimeter Wave Amplifier Modulementioning

confidence: 99%

Substrate integrated packaging for RF‐applications

Richter

Ferling

Buchali

et al. 2000

Microelectronics International

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In this paper, Substrate Integrated Packaging (SIP) based on thin film multilayer technology is presented. Coplanar waveguide feedthroughs calculated with 3D‐Finite Differential Methods were manufactured using a ceramic or silicon carrier, gold conductors and polyimide as dielectric. The substrate integrated packages were realized with metallic frames and lids mounted on the thin film circuitry. S‐parameter measurements show the superior quality of the feedthroughs. To verify the new packaging concept, a 10GHz and a 58GHz amplifier module were realized. From these modules the potential of the SIP‐technology is demonstrated.

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Section: Millimeter Wave Amplifier Modulementioning

confidence: 99%