Cooperative Indoor Localization Using 24-GHz CMOS Radar Transceivers

Abstract

This paper presents the first truly wireless 24-GHz round-trip time-of-flight local positioning frontend with an integrated CMOS transceiver. The transceiver in 130-nm CMOS technology features a novel receiver/transceiver switching concept, which reduces RF losses between the receiver/transmitter and antenna and drastically improves the transmit/receive isolation. The low-power RF transceiver chip was integrated with a digital signal-processing unit and mounted on a circuit board to form a system-level demonstrator of a secondary radar node incorporating synchronization and a distributed localization algorithm. The performance of the self-organizing localization network is evaluated in an indoor setup using comparisons with reference trajectories. Experimental results show a distance precision between the active nodes close to the theoretical optimum that can be achieved with the used signal parameters, as well as an absolute localization error in the centimeter range.

Cooperative radar with signature method for unambiguity

“…Network based localization involves several nodes detecting distance among each other or triangulate the position of passive targets by processing FMCW ramps of participating other transmitters (Ebelt et al, 2014;Frischen, 2017).…”

A K‐band high‐gain power amplifier with slow‐wave transmission‐line transformer in 130‐nm RF CMOS

“…As important building blocks in ADASs, millimeter‐wave (mm‐wave) radar sensors with high spatial resolution and low atmospheric attenuation have attracted great attentions on research and development in recent years. Currently, two mm‐wave bands are mainly applied for automotive radar sensors, one is K band at 24 GHz for short‐range applications such as blind‐spot detection and collision avoidance, the other is E band at 77 GHz for long‐range radar communication as adaptive cruise control 1–3 . Attributed to constantly shrinking dimensions of devices, complementary metal oxide semiconductor (CMOS) technology becomes a great competitor of III–V technologies, such as GaAs, InP, and pHEMT, to implement the high performance mm‐wave automotive radars, featuring low cost, low power, compact size, and high integration with analog/digital integrated circuits (ICs) 4,5 …”

Chip‐Based Microwave‐Photonic Radar for High‐Resolution Imaging

“…With the fast development of the monolithic microwave integrated circuit (MMIC) technology, a number of chip-based radars have been demonstrated. [2][3][4][5][6] For radar imaging, a waveform with a large bandwidth is usually required to achieve a high resolution because the range resolution is inversely proportional to the bandwidth. However, it is challenging for electronic chip-based radars to generate and process broadband waveforms especially in the Ka band or lower.…”