Abstract:In a cation exchange process developed recently for epitaxy of HgBa 2 CaCu 2 O 6 (Hg-1212) thin films, TlBa 2 CaCu 2 O 7 (Tl-1212) or Tl 2 Ba 2 CaCu 2 O 9 (Tl-2212) precursor films were employed as the precursor matrices and Hg-1212 was obtained by replacing Tl cations on the precursor lattice with Hg cations. The reversibility of the cation exchange dictates directly the underlying mechanism. Following our recent success in demonstrating a complete reversibility within '1212' structure, we show the conversion… Show more
“…Using epitaxial Tl-1212 and Tl-2212 films as precursors, epitaxial Hg-1212 thin and thick films have been obtained on dielectric and metal substrates for both electronic [12][13][14][15][16] and electrical devices applications [17,18]. Furthermore, the cation exchange between Hg-1212 films and Tl-1212 (or Tl-2212) films has been found to be fully reversible [10,19].…”
A cation exchange method was applied to convert epitaxial TlBa 2 Ca 2 Cu 3 O 8 (Tl-1223) and Tl 2 Ba 2 Ca 2 Cu 3 O 10 (Tl-2223) precursor superconducting thin films to epitaxial HgBa 2 Ca 2 Cu 3 O 8+δ (Hg-1223) films on LaAlO 3 (001) substrates. While the conversion of Tl-1223 to Hg-1223 was partially successful, high-quality epitaxial Hg-1223 films were obtained from Tl-2223 precursor films. A critical transition temperature T c of up to 132 K has been demonstrated for the Hg-1223 films, which is close to the optimal value of 135 K reported on Hg-1223 bulk samples. The critical current density J c of the Hg-1223 films was up to 0.25 MA cm −2 at 77 K and self-field. This work represents the first success in achieving the highest-T c epitaxial Hg-1223 films using the cation exchange method, which are promising candidates for device applications with operational temperatures significantly above the temperature of liquid nitrogen.
“…Using epitaxial Tl-1212 and Tl-2212 films as precursors, epitaxial Hg-1212 thin and thick films have been obtained on dielectric and metal substrates for both electronic [12][13][14][15][16] and electrical devices applications [17,18]. Furthermore, the cation exchange between Hg-1212 films and Tl-1212 (or Tl-2212) films has been found to be fully reversible [10,19].…”
A cation exchange method was applied to convert epitaxial TlBa 2 Ca 2 Cu 3 O 8 (Tl-1223) and Tl 2 Ba 2 Ca 2 Cu 3 O 10 (Tl-2223) precursor superconducting thin films to epitaxial HgBa 2 Ca 2 Cu 3 O 8+δ (Hg-1223) films on LaAlO 3 (001) substrates. While the conversion of Tl-1223 to Hg-1223 was partially successful, high-quality epitaxial Hg-1223 films were obtained from Tl-2223 precursor films. A critical transition temperature T c of up to 132 K has been demonstrated for the Hg-1223 films, which is close to the optimal value of 135 K reported on Hg-1223 bulk samples. The critical current density J c of the Hg-1223 films was up to 0.25 MA cm −2 at 77 K and self-field. This work represents the first success in achieving the highest-T c epitaxial Hg-1223 films using the cation exchange method, which are promising candidates for device applications with operational temperatures significantly above the temperature of liquid nitrogen.
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