Controlling ZnO nanowire surface density during its growth by altering morphological properties of a ZnO buffer layer by UV laser irradiation

Shimogaki, Tetsuya; Kawahara, Hiroharu; Nakao, Shihomi; Higashihata, Mitsuhiro; Ikenoue, Hiroshi; Nakata, Yoshiki; Nakamura, Daisuke; Okada, Tatsuo

doi:10.1007/s00339-014-8822-4

Cited by 9 publications

(4 citation statements)

References 25 publications

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“…Numerous applications in the spintronics of zinc oxide have piqued the curiosity of researchers. The wide band gap energy of the ZnO is 3.37 eV and the exciton binding energy is 60 m eV, making it perfect for use in light-emitting diodes (Shimogaki et al 2015;Thangeeswari et al 2015). The magnetic, optical, and electrical characteristics of ZnO could be modified by the doping of TM ions and RE elements, which depend on the dopants' nature, quantity, and synthesis process (Deshmukh et al 2010).…”

Section: Introductionmentioning

confidence: 99%

Electronic, structural and optical properties of Gd-doped ZnO powder synthesized by solid-state reaction method

Gora

Kumar

Choudhary

et al. 2023

Bangladesh J. Sci. Ind. Res.

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We explored the impact of Gd doping on the structural, electronic and optical characteristics of the ZnO powder. The Gd-doped ZnO (0, 2% and 5%) powder samples have been synthesized using the conventional solid-state reaction process with varied Gd concentrations. The XRD pattern confirmed that all the studied samples are in the hexagonal wurtzite crystalline structure. The morphology has been explored using SEM images, which exhibited an agglomerated rod-like particle structure. The XPS results indicate the presence of oxygen vacancies (Vo) in the Gd-doped ZnO samples and the Vo’s are found to increase with increasing Gd amount. According to PL findings, the intensity ratio of the green and ultra-violet emission peaks is found to increase from 0.090 to 0.418 with increasing Gd-doping concentrations, confirming that Vo’s are increasing with Gd-doping. The UV-visible spectroscopy results reveal that the energy band gap (Eg) decreased from 3.31 eV to 3.23 eV with increasing Gd-doping concentration. Bangladesh J. Sci. Ind. Res. 58(1), 53-64, 2023

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Section: Introductionmentioning

confidence: 99%

Electronic, structural and optical properties of Gd-doped ZnO powder synthesized by solid-state reaction method

Gora

Kumar

Choudhary

et al. 2023

Bangladesh J. Sci. Ind. Res.

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“…Zinc oxide (ZnO) including various nanostructured ZnO has been extensively studied as an active material in photochemistry and photoelectrochemistry because of its excellent comprehensive properties such as nontoxicity, low cost, good stability, high electron mobility, excellent photochemical (PC), and photoelectrochemical (PEC) properties , and is promising for the applications as photocatalysts and photoelectrodes. Among various ZnO nanostructures such as nanoparticles, nanowires, nanorods (NRs), and so forth, − one-dimensional ZnO NRs are more suitable for PC and PEC applications owing to their good structural orientation and large specific surface area. − However, ZnO itself has some inherent shortcomings. The wide band-gap of ZnO (∼3.37 eV) makes it only absorb ultraviolet (UV) light (about 5% of the solar spectrum), which is not conducive to the efficient use of solar energy .…”

Section: Introductionmentioning

confidence: 99%

Sandwiched CdS/Au/ZnO Nanorods with Enhanced Ultraviolet and Visible Photochemical and Photoelectrochemical Properties via Semiconductor and Metal Cosensitizing

Yao

Lin

et al. 2020

J. Phys. Chem. C

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Sandwich-structured CdS/Au/ZnO nanorods were prepared by embedding Au nanoparticles in CdS coating-covered ZnO nanorods for high photochemical and photoelectrochemical activities via semiconductor and metal cosensitizing. The photo-electrochemical and photochemical properties were evaluated for the CdS/Au/ZnO nanorods to be used as a photoanode in a photo-electrochemical process and as a photocatalyst to photodegrade organic methylene blue molecules. The CdS coatings serve as a semiconductor sensitizer to improve the photogeneration of electron–hole pairs and promote the separation and transfer of photogenerated electrons and holes by extending the photoresponse range, increasing light absorption and suppressing the recombination of electrons and holes. The Au nanoparticles act as a metal sensitizer to further increase the light absorption because of the local surface plasmon resonance effect and the increased effective optical path length and promote the transfer of photogenerated electrons from the conduction band of CdS to that of ZnO as an electron relay. The cosensitizing by CdS coatings and Au nanoparticles offers the CdS/Au/ZnO nanorods high photochemical and photoelectrochemical activities.

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“…Zinc oxide (ZnO) has received increasing attention because of its excellent material properties such as low cost, nontoxicity, ease of availability, high electron mobility, good stability in physics and chemistry, and thus its wide range of current and future applications. , In optoelectronics, in particular, ZnO is considered to be one of the most prospective materials for fabricating short wavelength semiconductor lasers and light emitting diodes due to its wide direct band gap (∼3.3 eV) and large exciton binding energy (∼60 meV) at room temperature, − which allow ZnO to have a high efficiency for exciton emission in the ultraviolet (UV) region at or even above room temperature. In addition, various ZnO nanostructures such as nanorods, nanowires, nanobelts, nanocombs, and nanorings can be fabricated. − They have shown better capability in light emitting than ZnO in bulk or film forms and are believed to be promising candidates for the fabrication of UV light emitting devices. Moreover, the properties of ZnO nanostructures can be significantly tailored by changing their morphology, structure, and size or decorating their surface with nanoparticles or an ultrathin coating of other materials. − …”

Section: Introductionmentioning

confidence: 99%

Large Enhancement and Its Mechanism of Ultraviolet Emission from ZnO Nanorod Arrays at Room and Low Temperatures by Covering with Ti Coatings

Yao

Gan³

et al. 2020

J. Phys. Chem. C

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ZnO has attracted considerable attention as an ultraviolet (UV) light emitting material. Many efforts have been made to promote efficiency for UV emission. We report large enhancement in UV emission from ZnO nanorod (NR) arrays by covering with Ti coatings. Together with morphology and structure characterization, the capability of UV emission from the Ti-coating-covered ZnO (Ti/ZnO) NR arrays was evaluated by systematically examining the photoluminescence at room and low temperatures. At room temperature, the bare ZnO NR arrays are capable of emitting a photoluminescence composed of a strong UV near-band-edge (NBE) emission of ZnO and a weak visible emission associated with deep-level defects in ZnO. The UV NBE emission is enhanced by about 24 times after covering the ZnO NR arrays with Ti coatings. The UV NBE emission increases drastically as the temperature drops, with the increase of the UV NBE emission of the Ti-covered ZnO NR arrays being much faster than that of the bare ZnO NR arrays. The UV NBE emission of the Ti/ZnO NR array is increased by about 175 times when the temperature drops from room temperature to 10 K. Compared to the UV NBE emission of the bare ZnO NR arrays, a 70-fold enhancement in the UV NBE emission of the Ti-covered ZnO NR arrays is obtained at 10 K.

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Controlling ZnO nanowire surface density during its growth by altering morphological properties of a ZnO buffer layer by UV laser irradiation

Cited by 9 publications

References 25 publications

Electronic, structural and optical properties of Gd-doped ZnO powder synthesized by solid-state reaction method

Electronic, structural and optical properties of Gd-doped ZnO powder synthesized by solid-state reaction method

Sandwiched CdS/Au/ZnO Nanorods with Enhanced Ultraviolet and Visible Photochemical and Photoelectrochemical Properties via Semiconductor and Metal Cosensitizing

Large Enhancement and Its Mechanism of Ultraviolet Emission from ZnO Nanorod Arrays at Room and Low Temperatures by Covering with Ti Coatings

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