Controlling the quantum dot nucleation site

Diffusion Dynamics during the Nucleation and Growth ofGe/SiNanostructures on Si(111)

“…A hexagonal array would follow from the symmetry of the Si(111) surface and the isotropic character of islandisland interactions. Despite this, most experimental reports depict a random scattering of self-organized nuclei [10]. The growth of the islands as well might be governed by diffusive phenomena [11].…”

The entangled role of strain and diffusion in driving the spontaneous formation of atolls and holes in Ge/Si(111) heteroepitaxy

“…Ge was deposited at 600 • C under a constant flux of 0.3 ML min −1 (1 ML (monolayer) on Si(111) = 1.56 × 10 15 atoms cm −2 ). Ge islands were grown by deposition of 10 ML of Ge at 600 • C. At this coverage, large Ge islands with flat-top {111} facets were formed on the Si(111) substrate [24][25][26]. To form atoll-like structures, SiGe samples were annealed by DCH to T ≈ 970 • C for various time intervals.…”

Anisotropy effects during non-selective epitaxial growth of Si and SiGe materials

“…7c and d). Indeed, the (1 1 1) Si 0.8 Ge 0.2 surface exhibits triangular clusters oriented along well defined directions: their heads, 601 angle, point along /1 1 2S direction and their bases are aligned parallel to /1 1 0S direction [35]. The thickness of these triangles is less than ten nanometers, while base length varies from several nanometers to several hundred nanometers (10-300 nm).…”