Controlling the properties of surface acoustic waves using graphene

Bandhu, Lokeshwar; Nash, George

doi:10.1007/s12274-015-0947-z

Cited by 42 publications

(60 citation statements)

References 33 publications

(40 reference statements)

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“…For both hole and electron doping we find that V ae is linear in the applied SAW power, consistent with Eqn. (3) and with previous acoustoelectric measurements in graphene 18,20,21,25 .…”

Section: B Graphene Acoustoelectricssupporting

confidence: 74%

Flip-chip gate-tunable acoustoelectric effect in graphene

Lane

Zhang

Khasawneh

et al. 2018

Journal of Applied Physics

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We demonstrate a flip-chip device for performing low-temperature acoustoelectric measurements on exfoliated two-dimensional materials. With this device we study gate-tunable acoustoelectric transport in an exfoliated monolayer graphene device, measuring the voltage created as highfrequency surface acoustic waves dynamically drive the graphene charge carriers, the density of which we simultaneously control with a silicon back-gate. We demonstrate ambipolar dependence of the acoustoelectric signal, as expected from the sign of the graphene charge carriers. We observe a marked reduction in the magnitude of the acoustoelectric signal over a well-defined range of density in the vicinity of charge neutrality, which we attribute to a spatially heterogeneous charge-disorder landscape not directly revealed by conventional transport measurements. arXiv:1801.05270v3 [cond-mat.mes-hall]

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“…For both hole and electron doping we find that V ae is linear in the applied SAW power, consistent with Eqn. (3) and with previous acoustoelectric measurements in graphene 18,20,21,25 .…”

Section: B Graphene Acoustoelectricssupporting

confidence: 74%

Flip-chip gate-tunable acoustoelectric effect in graphene

Lane

Zhang

Khasawneh

et al. 2018

Journal of Applied Physics

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“…The attenuation per unit length Γ is given by a non-monotonic function of the diagonal component of the conductivity tensor σ 2D 2 :where K 2 is the piezoelectric coupling coefficient (0.056 in 128° YX LiNbO 3 ), λ is the SAW wavelength, and the attenuation is maximised at a characteristic conductivity σ M . Bandhu and Nash have reported σ M = 10 −7 Ω −1 in graphene-lithium niobate hybrid systems 16 .…”

Section: Resultsmentioning

confidence: 99%

Acoustoelectric Current in Graphene Nanoribbons

Poole

Nash

2017

Sci Rep

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Surface acoustic waves (SAWs) propagating on piezoelectric substrates offer a convenient, contactless approach to probing the electronic properties of low-dimensional charge carrier systems such as graphene nanoribbons (GNRs). SAWs can also be used to transport and manipulate charge for applications such as metrology and quantum information. In this work, we investigate the acoustoelectric effect in GNRs, and show that an acoustoelectric current can be generated in GNRs with physical widths as small as 200 nm at room temperature. The positive current in the direction of the SAWs, which corresponds to the transportation of holes, exhibits a linear dependence on SAW intensity and frequency. This is consistent with the description of the interaction between the charge carriers in the GNRs and the piezoelectric fields associated with the SAWs being described by a relatively simple classical relaxation model. Somewhat counter-intuitively, as the GNR width is decreased, the measured acoustoelectric current increases. This is thought to be caused by an increase of the carrier mobility due to increased doping arising from damage to the GNR edges.

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“…In this case, a strong piezoelectric layer like AlN [88] electrode and below the graphene layer acted as both the piezoelectric material for the acoustic device and the dielectric film of the field-effect transistor. Figure 11(a) displays the two-contact DC-resistance of a graphene layer on LiNbO 3 as a function of the bias voltage applied to the top gate, V gate [84]. The maximum value, observed at V 0 ≈ 0.4 V, indicates the gate voltage for which the chemical potential reaches the charge-neutrality point.…”

Section: Control Of Graphene Electronic Properties By Saw Latticesmentioning

confidence: 99%

Interaction of surface acoustic waves with electronic excitations in graphene

Hernández-Mínguez¹,

Liou²,

Santos³

2018

J. Phys. D: Appl. Phys.

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This article reviews the main theoretical and experimental advances regarding the interaction between surface acoustic waves (SAWs) and electronic excitations in graphene. The coupling of the graphene electron gas to the SAW piezoelectric field can modify the propagation properties of the SAW, and even amplify the intensity of SAWs traveling along the graphene layer. Conversely, the periodic electric and strain fields of the SAW can be used to modify the graphene Dirac cone and to couple light into graphene plasmons. Finally, SAWs can generate acoustoelectric currents in graphene. These increase linearly with the SAW frequency and power but, in contrast to conventional currents, they depend non-monotonously on the graphene electric conductivity. Most of these functionalities have been reported in graphene transferred to the surface of strong piezoelectric insulators. The recent observation of acousto-electric currents in epitaxial graphene on SiC opens the way to the large-scale fabrication of graphene-based acousto-electric devices patterned directly on a semi-insulating wafer.

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Controlling the properties of surface acoustic waves using graphene

Cited by 42 publications

References 33 publications

Flip-chip gate-tunable acoustoelectric effect in graphene

Flip-chip gate-tunable acoustoelectric effect in graphene

Acoustoelectric Current in Graphene Nanoribbons

Interaction of surface acoustic waves with electronic excitations in graphene

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