2000
DOI: 10.1016/s0921-4534(00)01049-2
|View full text |Cite
|
Sign up to set email alerts
|

Controlling the natural strong pinning sites in laser ablated YBa2Cu3O7-δ thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
4
0

Year Published

2002
2002
2017
2017

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 7 publications
(4 citation statements)
references
References 4 publications
0
4
0
Order By: Relevance
“…6,13,18 To verify this, MO imaging was used to visualize and quantify the initial flux distribution of the samples. Figures 3͑a͒ and 3͑b͒ show respectively the flux penetration after the application of applied field, B a =45 mT, at 5 K in YBCO films deposited on an untreated control and on the same modified STO that was presented in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…6,13,18 To verify this, MO imaging was used to visualize and quantify the initial flux distribution of the samples. Figures 3͑a͒ and 3͑b͒ show respectively the flux penetration after the application of applied field, B a =45 mT, at 5 K in YBCO films deposited on an untreated control and on the same modified STO that was presented in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…This may be a threading dislocation, which originates from the island-YBCO film interface, as suggested by several researchers. 4,8,9) Using a wet etching technique in combination with AFM, 9) we found the average distance between linear defects to be $150 nm.…”
mentioning
confidence: 99%
“…4) The incidence of edge and screw dislocations correlates with the incidence of nonstoichiometric nucleation sites and, at least over certain dislocation densities, not with the release of misfit strain or with the number of dislocations in the substrate [11]. The latter two may indeed induce the formation of dislocations in the film but the number so induced could only be a lower limit as other causes, such as the incidence of the aforementioned non-stoichiometric nucleation sites dominates.…”
Section: P-pomentioning
confidence: 98%
“…The latter two may indeed induce the formation of dislocations in the film but the number so induced could only be a lower limit as other causes, such as the incidence of the aforementioned non-stoichiometric nucleation sites dominates. It is concluded by Dam et al [11] that the dislocations are formed as a result of the merging of misaligned growth fronts, when overgrowing precipitates. 6) The incidence of 2D and 3D growth features is altered by the deposition conditions [10,11] which means that although underlying features can affect subsequent layers the extent to which they do so is moderated by the growth conditions .…”
Section: P-pomentioning
confidence: 99%