Controlling the morphology transition between step-flow growth and step-bunching growth

Bellmann, Konrad; Pohl, Udo W.; Kühn, Christian; Wernicke, Tim; Kneissl, Michael

doi:10.1016/j.jcrysgro.2017.09.007

Cited by 51 publications

(39 citation statements)

References 24 publications

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“…The present results of change in growth mode from step bunching to step‐flow growth mode with increasing surface supersaturation (increasing growth rate and/or V/III ratio as well as decreasing T g ) agree well with the previous studies. [ 28–30 ] As already well discussed in the literature, [ 28–30 ] this can be ascribed to the surface diffusion length of Al adatoms. When the diffusion length is close to the terrace width, which is determined by the substrate off‐cut angle, the surface with monolayer steps can be obtained, as shown in Figure 4m.…”

Section: Resultsmentioning

confidence: 77%

“…In the previous literature, the influence of growth parameters such as T g , V/III ratio, and substrate off‐cut angle on the evolution of the growth mode has been reported for samples on bulk AlN substrates [ 28 ] and AlN/sapphire templates [ 29,30 ] in detail. Figure 4m,n shows the schematic illustrations of AlN growth with step‐flow growth mode and step‐bunched morphology, respectively.…”

Section: Resultsmentioning

confidence: 99%

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High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire

Shojiki

Uesugi

Kuboya

et al. 2020

Physica Status Solidi (b)

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This study comprehensively investigates the properties of metalorganic vapor phase epitaxy (MOVPE)‐grown AlN films on high‐quality face‐to‐face annealed sputtered AlN (FFA Sp‐AlN) templates on sapphire substrates, which are highly important to control the surface morphology for various applications, such as UV light‐emitting diodes and laser diodes. The conditions of thermal cleaning and AlN growth by MOVPE are investigated to remove numerous small islands on as‐annealed FFA Sp‐AlN. Subsequent to thermal cleaning in H2 + NH3 at 1300 °C, MOVPE growth is performed with varying NH3 flow rate and growth temperature (Tg) under a constant pressure and group‐III flow rate. An atomically flat surface with an atomic step‐and‐terrace structure is obtained at a growth rate of ≈1.0 μm h−1 and a Tg of 1300 °C. Transmission electron microscopy images and secondary‐ion mass spectrometry reveal low dislocation densities and impurity concentrations. Finally, the effects of compressive strain in FFA Sp‐AlN on the lattice constant and curvature of the MOVPE‐grown AlN film on FFA Sp‐AlN are investigated. The compressive strain of the AlN film, which is carried over from FFA Sp‐AlN, can prevent crack formation but leads to a large wafer curvature after cooling down from the Tg.

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Section: Resultsmentioning

confidence: 77%

Section: Resultsmentioning

confidence: 99%

High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire

Shojiki

Uesugi

Kuboya

et al. 2020

Physica Status Solidi (b)

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show abstract

“…Further increase of the V/IIIratio to 27000 (Figure 2e) does not significantly affect the surface roughness. We consider that the step bunching is caused by anisotropy in the terrace step adatom capture probabilities [26]. The anisotropy in capture probability leads to differences in step lateral advancement rates and can cause step-bunching.…”

Section: Resultsmentioning

confidence: 99%

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Lemettinen

Okumura

Kim

et al. 2018

Journal of Crystal Growth

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We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Alpolar AlN on 4H-SiC with 4 • miscut using constant growth parameters. At a high temperature of 1165 • C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick m-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (002), (102) and (201) reflections, respectively.

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“…The second area of instability in the SU has no corresponding area in SD stability diagram, but exists for low pS data, and can be responsible for system behavior under different experimental conditions than those studied here. Conceptually similar stability analyses were published recently of Monte Carlo models where the source of the instability is Erhlich-Schwoebel barrier [46,47].…”

Section: Iii1 Stability Analysismentioning

confidence: 54%

Step bunching with both directions of the current: Vicinal W(110) surfaces versus atomistic-scale model

et al. 2018

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We report for the first time the observation of bunching of monoatomic steps on vicinal W(110) surfaces induced by step up or step down currents across the steps. Measurements reveal that the size scaling exponent γ, connecting the maximal slope of a bunch with its height, differs depending on the current direction. We provide a numerical perspective by using an atomistic scale model with a conserved surface flux to mimic experimental conditions, and also for the first time show that there is an interval of parameters in which the vicinal surface is unstable against step bunching for both directions of the adatom drift.

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Controlling the morphology transition between step-flow growth and step-bunching growth

Cited by 51 publications

References 24 publications

High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire

High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Step bunching with both directions of the current: Vicinal W(110) surfaces versus atomistic-scale model

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