Controlling the Growth of Si/Ge Nanowires and Heterojunctions Using Silver–Gold Alloy Catalysts

Chou, Y. T.; Wen, Cheng; Reuter, M. C.; Su, Dong; Stach, Eric A.; Ross, Frances M.

doi:10.1021/nn301978x

Cited by 78 publications

(123 citation statements)

References 34 publications

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“…Reports also suggest that another option is to engineer alloy NPs composed of two metals [15,16]. For example, Chou et al demonstrated impressive group IV NW heterostructures using Au-Ag alloy catalysts [15].…”

Section: Introductionmentioning

confidence: 99%

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

et al. 2017

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Part of developing new strategies for fabrications of nanowire structures involves in many cases the aid of metal nanoparticles (NPs). It is highly beneficial if one can define both diameter and position of the initial NPs and make well-defined nanowire arrays. This sets additional requirement on the NPs with respect to being able to withstand a pre-growth annealing process (i.e. de-oxidation of the III-V semiconductor surface) in an epitaxy system.Recently, it has been demonstrated that Ag may be an alternative to using Au NPs as seeds for particle-seeded nanowire fabrication. This work brings light onto the effect of annealing of Au, Ag and Au-Ag alloy NP arrays in two commonly used epitaxial systems, the Molecular Beam Epitaxy (MBE) and the Metalorganic Vapor Phase Epitaxy (MOVPE). The NP arrays are fabricated with the aid of Electron Beam Lithography on GaAs 100 and 111B wafers and the evolution of the NPs with respect to shape, size and position on the surfaces 2 are studied after annealing using Scanning Electron Microscopy (SEM). We find that while the Au NP arrays are found to be stable when annealed up to 600 °C in a MOVPE system, a diameter and pitch dependent splitting of the particles are seen for annealing in a MBE system. The Ag NP arrays are less stable, with smaller diameters (≤ 50 nm) dissolving during annealing in both epitaxial systems. In general, the mobility of the NPs is observed to differ between the two the GaAs 100 and 111B surfaces. While the initial pattern is found be intact on the GaAs 111B surface for a particular annealing process and particle type, the increased mobility of the NP on the 100 may influence the initial pre-defined positions at higher annealing temperatures. The effect of annealing on Au-Ag alloy NP arrays suggests that these NP can withstand necessary annealing conditions for a complete de-oxidation of GaAs surfaces.

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Section: Introductionmentioning

confidence: 99%

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

et al. 2017

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“…Random transverse twin events in Si nanowires have been demonstrated with different non-Au catalysts such as Cu [46], Al [47], Ga [48], AuAg [49], etc. The first demonstration of controlled rational generation of transverse twin boundaries in Au-catalysed Si nanowires was reported by Shin et al [50] Characteristic saw-tooth faceting in nanowire morphology, due to twin boundary formation, was observed in Si nanowires.…”

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confidence: 99%

Inducing imperfections in germanium nanowires

2017

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Access to the full text of the published version may require a subscription. Rights © Tsinghua University Press and Springer-Verlag Berlin Heidelberg2017. This is a pre-print of an article published in Nano Research. and/or interfacial manipulation. An "epitaxial defect transfer" process and catalyst-nanowire interfacial engineering is employed to induce twin defects parallel and perpendicular to the nanowire growth axis. By inducing and manipulating twin boundaries in the metal catalysts, twin formation and density is controlled in Ge nanowires. The formation of Ge polytypes is also observed in nanowires for the growth of highly dense lateral twin boundaries.Additionally, metal impurity, in the form of Sn, is injected and engineered via third-party metal catalysts resulting above-equilibrium incorporation of Sn adatoms in Ge nanowires. Sn impurities are precipitated into Ge bi-layers during Ge nanowire growth, where the impurity Sn atoms become trapped with the deposition of successive layers, thus giving an extraordinary Sn content (> 6 at.%) in the Ge nanowires. A larger amount of Sn impingement (> 9 at.%) is further encouraged by the utilising eutectic solubility of Sn in Ge along with the impurity trapping.

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“…22 Furthermore, by tuning the phase of Ag-Au alloy catalysts, atomically sharp interfaces in Si/Ge nanowires can be realized. 23 Non-Au catalysts, such as Al, 24 Cu, 25 and Pd, 26,27 have also been effectively utilized to catalyze nanowire growth and to study the growth mechanisms of semiconductor nanowires. However, achieving high-quality III-V nanowire growth using non-Au catalysts remains challenging and requires further investigations to understand the fundamental growth mechanism.…”

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confidence: 99%

Catalyst size dependent growth of Pd-catalyzed one-dimensional InAs nanostructures

Guo

Liao

et al. 2013

Applied Physics Letters

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In this study, Pd was used as catalyst to grow one-dimensional InAs nanostructures on GaAs (111)B substrates in order to explore the growth mechanism and the effect of non-gold catalysts in growing epitaxial III-V nanostructures. With detailed morphological, structural, and chemical characterizations using electron microscopy, coupled with analysis of the Pd-In binary phase diagram, it was found that size of Pd nanoparticles plays a key role in determining the growth mechanism of one-dimensional InAs nanostructures.

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Controlling the Growth of Si/Ge Nanowires and Heterojunctions Using Silver–Gold Alloy Catalysts

Cited by 78 publications

References 34 publications

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

Inducing imperfections in germanium nanowires

Catalyst size dependent growth of Pd-catalyzed one-dimensional InAs nanostructures

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