Controlling the growth of nanocrystalline silicon by tuning negative substrate bias

Raha, Debnath; Das, Debajyoti

doi:10.1016/j.solmat.2011.06.048

Cited by 50 publications

(24 citation statements)

References 48 publications

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“…Quantitative estimation of the crystalline volume fraction (X C ) has been performed by the deconvolution of each Raman spectrum into three Gaussian components, the component on the higher frequency side represents the nanocrystalline part of the material and the lower frequency component arises from the amorphous part, whereas the intermediate one corresponds to the ultra-nanocrystalline and/or the grain boundary component. 24 The variation of crystalline volume fraction (X C ) and ultrananocrystalline fraction (X unc ) is shown in Fig. 6(b).…”

Section: Resultsmentioning

confidence: 99%

Tunable photoluminescence from nc-Si/a-SiNx:H quantum dot thin films prepared by ICP-CVD

Sain

Das

2013

Phys. Chem. Chem. Phys.

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Intense visible photoluminescence (PL) tunable within 1.66-2.47 eV, under UV 325 nm excitation, was obtained from nanocrystalline silicon quantum dots (∼5.72-1.67 nm in diameter) embedded in amorphous silicon-nitride matrix (nc-Si/a-SiN(x):H) prepared in RF-ICPCVD (13.56 MHz) at substrate temperatures between 400 to 150 °C. The dominant component of PL, having a narrow band width of ∼0.16-0.45 eV, originates from quasi-direct band-to-band recombination due to quantum confinement effect (QCE) in the nanocrystalline silicon quantum dots (nc-Si QDs) of appropriate size; however, the contribution of defects arose at lower substrate temperatures leading to asymmetric broadening. Intense atomic hydrogen flux in high-density inductively coupled plasmas (ICPs) provides a very high surface coverage, passivates well the nonradiative dangling bonds, and thereby favors the PL intensity. The average size of nc-Si QDs measured by HR-TEM appears consistent with similar estimates from Raman studies. The red shift of the Raman line and corresponding line broadening originates from the confinement of optical phonons within nc-Si QDs. Photoluminescence emerging from nc-Si/a-SiN(x):H quantum dots obtained from the low temperature and single-step plasma processing holds great promise for the fabrication of light-emitting devices and flexible flat panel displays.

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Section: Resultsmentioning

confidence: 99%

Tunable photoluminescence from nc-Si/a-SiNx:H quantum dot thin films prepared by ICP-CVD

Sain

Das

2013

Phys. Chem. Chem. Phys.

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“…The detailed investigation by the Raman studies on the samples has been shown in a previous publication. 30 The crystallinity in the bulk of the nc-Si:H films obtained from the ellipsometry data and the overall crystallinity estimated from the Raman study has been plotted at the inset (b) in Fig. 2 which indentifies an excellent agreement.…”

Section: A Ellipsometric Studymentioning

confidence: 64%

Effect of substrate bias on the promotion of nanocrystalline silicon growth from He-diluted SiH₄ plasma at low temperature

et al. 2012

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The effect of direct current (dc) substrate bias on the promotion of nanocrystallization in Si network has been studied, specifically within He-diluted SiH 4 plasma in radio frequency (RF)-plasma-enhanced chemical vapor deposition. In view of organizing nanocrystallinity, controlled transmission of energy to the growing surface is needed and that is obtainable from metastable helium (He*) bombardment and, in particular, ionic helium (He + ) bombardment under negative substrate bias. The structural morphology has been adequately regulated to a homogeneous network restraining from an exclusive columnar structure that is coherent to low-temperature growth. Notable improvements in the film quality in terms of enhanced crystallinity with low hydrogen content as well as reduced incubation volume, bulk void, and surface roughness have been demonstrated, even at low substrate temperature and low RF power. Use of appropriate dc substrate-bias has been identified as a supplementary parameter efficiently organizing the growth, making it more device-friendly.

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“…The intermediate phase implying the possible existence of Si QDs, and the films are supposed to be a mixture of various components including amorphous content and c‐Si QDs. Considering the intermediate phase as a part of crystalline component, F c is defined by the integrated area ratio

F_{normalc} = true(I_{a} + I_{i} true) / ({β I}_{normala} + I_{normali} + I_{normalc})

where I a , I i , and I c represented the integrated area of a‐Si phase peak, intermediate phase peak and c‐Si phase peak, respectively. β is the ratio of the integrated Raman cross‐section of the amorphous phase to crystalline phase and is defined as

β true(D true) = 0.1 + normalexp (- D / 250)

where D is the Si QD size in nm.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Silicon Quantum Dots Embedded in Boron‐Doped Silicon Oxide Thin Films Prepared by PECVD Applying Ar Dilution

Liu

Zhang

2017

Physica Status Solidi (a)

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In situ deposition method is adopted for preparing boron‐doped silicon oxide thin film containing silicon quantum dot at the relative low substrate temperature of 200 °C. Argon dilution is applied in the deposition process, and various characterizations have been carried out for systematically investigating the effect of Ar flow on the structural, electrical, and optical properties of the samples. It is found that there is a phase transition from amorphous phase to crystalline phase as the Ar flow increases to 100 sccm. XPS results reveal that the O/Si atomic ratio declines with the increasing Ar flow whereas the B/Si atomic ratio shows an opposite varying tendency. By introducing moderate Ar flow, the B‐doping efficiency is improved due to the crystallization and the enhanced dissociation of B2H6. The maximum values of dark conductivity (1.64 S cm−1) and carrier concentration (2.6 × 1019 cm−3) were obtained at the Ar flow of 100 sccm. Furthermore, detailed discussion has been made to analyze the influence of Ar dilution on the properties of the B‐doped SiOx thin films.

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Controlling the growth of nanocrystalline silicon by tuning negative substrate bias

Cited by 50 publications

References 48 publications

Tunable photoluminescence from nc-Si/a-SiNx:H quantum dot thin films prepared by ICP-CVD

Tunable photoluminescence from nc-Si/a-SiNx:H quantum dot thin films prepared by ICP-CVD

Effect of substrate bias on the promotion of nanocrystalline silicon growth from He-diluted SiH₄ plasma at low temperature

Investigation of Silicon Quantum Dots Embedded in Boron‐Doped Silicon Oxide Thin Films Prepared by PECVD Applying Ar Dilution

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Controlling the growth of nanocrystalline silicon by tuning negative substrate bias

Cited by 50 publications

References 48 publications

Tunable photoluminescence from nc-Si/a-SiNx:H quantum dot thin films prepared by ICP-CVD

Tunable photoluminescence from nc-Si/a-SiNx:H quantum dot thin films prepared by ICP-CVD

Effect of substrate bias on the promotion of nanocrystalline silicon growth from He-diluted SiH4 plasma at low temperature

Investigation of Silicon Quantum Dots Embedded in Boron‐Doped Silicon Oxide Thin Films Prepared by PECVD Applying Ar Dilution

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Effect of substrate bias on the promotion of nanocrystalline silicon growth from He-diluted SiH₄ plasma at low temperature