Controlling the Electronic Structure of Bilayer Graphene

Abstract

We describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission. By selectively adjusting the carrier concentration in each layer, changes in the Coulomb potential led to control of the gap between valence and conduction bands. This control over the band structure suggests the potential application of bilayer graphene to switching functions in atomic-scale electronic devices

Stacking-Dependent Electronic Structure of Trilayer Graphene Resolved by Nanospot Angle-Resolved Photoemission Spectroscopy

“…[2][3][4] In trilayer graphene, the different stacking sequences provide an even richer playground for electronic band structure engineering. 2 There are three stacking sequences, simple hexagonal (AAA), Bernal (ABA) and rhombohedral (ABC) stackings as schematically shown in Fig.…”

Transport Gap Opening and High On–Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

“…12 Potentially, graphene-based electronics could consist of just one or a few layers of graphene; however, the absence of a band gap presents a conundrum for the implementation of conventional device architectures, similar to those based on semiconducting materials. [13][14][15][16][17][18] Several methods have been proposed for opening band or transport gaps in graphene, such as patterning single-layer graphene into narrow ribbons, 19 introducing nanoholes into the graphene sheets, 20 applying a perpendicular electric field, [13][14][15][16][17][18][21][22][23][24] or applying mechanical strain. 25,26 Unlike bilayer graphene, gap-opening in trilayer graphene depends on the stacking order of the layers, and notably for ABA (Bernal) stacking it remains metallic even in the presence of a perpendicular electric field.…”

The extended growth of graphene oxide flakes using ethanol CVD

“…2 However the semi-metal and zero-band 20 gap electronic structure of pristine graphene limits its use in electronic, sensing and optical applications. Some approaches to open the band-gap include post-processing of graphene such as strain engineering, 3 lateral confinement, 4 breaking inversion symmetry in bi-layer graphene, 5 oxidation 6 and usage of reduced 25 graphene oxide (RGO). 7,8 One method of obtaining a band gap is through the use of RGO.…”