Controlling the Degree of Hydrophilicity/Hydrophobicity of Semiconductor Surfaces via Porosification and Metal Deposition

Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications

“…It was shown that the porosity degree and alignment of the pores obtained on different surface orientations of (111) GaAs crystal also have a strong influence upon the resulted contact angle. [ 68 ]…”

“…[ 70 ] However, the previous study of wetting properties was limited to the investigation of bulk GaAs crystals [ 71 ] or gold‐decorated bulk semiconductor surfaces. [ 68 ] In contrast to the bulk or porous GaAs layer, the decorated via electroplating with gold nanodots porous layer demonstrated an increase of the CA up to 117.6°.…”

“…It was shown that the porosity degree and alignment of the pores obtained on different surface orientations of (111) GaAs crystal also have a strong influence upon the resulted contact angle. [68] Another way to control the wetting properties is the decoration of surfaces by a dense monolayer of gold nanodots. A part of the porous layer (see Figure 7, left side) was covered by gold nanodots via pulsed electroplating with a pulse duration of 50 μs and a delay between the pulses as long as 1 s. The deposition took place according to the previously proposed and demonstrated "hopping electrodeposition" mechanism of gold plating, leading to the formation of closely packed monolayer of gold nanodots covering the bulk or the whole porous surface.…”