Controlling the carrier density of surface conductive diamond

Studies on tuning surface electronic properties of hydrogenated diamond by oxygen functionalization

“…Although intensive X-ray photoelectron spectroscopy (XPS) studies were carried out on HDs and ODs for understanding the surface electronic structure in terms of band bending, 2DHG formation, and work function [3,10] the studies on partially oxygenated diamond surfaces are limited. Such partial ozonation would allow to tune of surface electronic properties of diamonds that will help to control the electronic device characteristics of HDs for desired applications in the areas of field effect transistors, electrochemical devices, and chemical gas and bio-sensors [13,18]. For example, the HD based MOSFETs often have normally-ON state due to its high surface conductivity.…”

“…But, it has been demonstrated that a partial C-O channel makes the device to be normally-OFF state with high breakdown voltage (~2000 V) [13]. Also, the surface carrier density of diamonds is shown to be tuned by controlling the H-termination process conditions and the variation in carrier density can also provide the opportunity to tune to the drain voltage and drain currents in HD MOSFETs [18]. However, the studies on the structural and physical properties that evolve with partial oxygenation on diamond surface are scarce.…”

Rational Integration of SnMOF/SnO2 Hybrid on TiO2 Nanotube Arrays: An Effective Strategy for Accelerating Formaldehyde Sensing Performance at Room Temperature

“…Meanwhile, the released electrons returning to the bulk increased the circuit carrier density. 40,41 In other words, the conductivity of the sensor device increased and the resistance decreased, and this was measured by a picoammeter.…”

“…Considering that SnO 2 crystals were formed by in situ calcination of SnMOF and highly dispersed in the porous SnMOF (Figure h), the enriched formaldehyde molecules thus gained an increased opportunity to take place the sensing reaction on these SnO 2 sites (with adsorbed oxygen anions, O 2 – eqs and ), as illustrated in Figure b HCHO ( g ) → HCHO ( ads ) HCHO ( ads ) + normalO 2 − ( ads ) → CO 2 + H 2 normalO + e − The electrons trapped by active sites were then released to the sensor bulk, leading to a thinner space charge layer (Figure b) and a decreased potential barrier (Figure d). Meanwhile, the released electrons returning to the bulk increased the circuit carrier density. , In other words, the conductivity of the sensor device increased and the resistance decreased, and this was measured by a picoammeter.…”

The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure

“…4) Carrier doping is an important process for the fabrication of semiconductor devices. The doping processes of diamond are often studied in 2D hole formation by hydrogen-termination, 5) and the doping of group III or V elements as acceptors or donor impurities.…”