The electronic band structures, structural, and elastic properties of monolayer MoS 2 under the biaxial strains are investigated using DFT and DFT + U methods. Significant changes in the bond distances, bond angles, electronic structures, and effective mass of electron m e * (hole m h * ) are observed under biaxial strain. The Bulk modulus decreases (increases) by increasing the tensile (compressive) biaxial strain. The band-gap values of unstrained 1L-MoS 2 are estimated as 1.78 (1.81) eV within the GGA (GGA + U) approximations; however, direct band gap varies from 1.74 (1.76) to 1.92 (1.95) eV within a region of 0.3(0.4)% tensile to 1.13(1.11)% compressive strains. Beyond this strain region, direct nature of the band gap becomes indirect, and further increment causes semiconductor to metallic transition. Direct bandgap tuning and observed small effective mass values of electrons and holes carriers under applied strain indicate the enhanced optoelectronic properties in strained monolayer MoS 2 .