Controlling electrical and optical properties of zinc oxide thin films grown by thermal atomic layer deposition with oxygen gas

Nguyen, Tai; Adjeroud, Noureddine; Guennou, Maël; Guillot, Jérôme; Fleming, Y.H.; Papon, Anne‐Marie; Arl, Didier; Menguelti, K.; Joly, Raoul; Gambacorti, N.; Polesel-Maris, Jérôme

doi:10.1016/j.rinma.2020.100088

Cited by 24 publications

(15 citation statements)

References 70 publications

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“…The present study confirms and complements our previous work, 17 by showing how the presence of oxygen gas pulsing during the ALD process profoundly affects the crystallographic, morphological, optical, electrical, and electronic properties of ZnO thin films (Fig. 1, 2 and Fig.…”

Section: Discussionsupporting

confidence: 91%

“…S3 in the ESI †). Complementary to our first work 17 highlighting the impact of the oxygen gas presence in the growth process on the properties of ZnO films, in this study, we point out that these profound features are in intimate correlation with the oxygen chemisorption incorporated in the ZnO surface during growth, which is identified by the XPS analysis showing an additional peak at 532.2 eV, allocated to hydroxides, and an increase of the O 2p-Zn 4sp hybridized states in the valence bands, due to the incorporation of O and/or OH in the ZnO films. By chemisorbing oxygen, the ZnO(001)-Zn polar surface can be electrostatically stabilized as highlighted by P. Gorai et al 34 Thus, the (002) orientation films grew preferentially.…”

Section: Discussionmentioning

confidence: 55%

“…[3][4][5][6][7] This control is usually achieved by varying the single crystal substrates [8][9][10][11] and the deposition temperature, [12][13][14][15] however practical applications are limited due to requirements in the crystallographic structure of substrates, as well as elevated deposition temperatures. Park et al, 16 and our previous study 17 demonstrated that the crystallographic structure, the optical and the electronic properties of ZnO thin film were highly tuned by the introduction of gas pulsing of molecular oxygen during atomic layer deposition growth at quite low temperatures (100-200 1C) and even on glass substrates. The randomly oriented film structure was transformed into a highly preferred (002) orientation.…”

Section: Introductionmentioning

confidence: 83%

“…By chemisorbing oxygen, the ZnO(001)-Zn polar surface can be electrostatically stabilized as highlighted by P. Gorai et al 34 Thus, the (002) orientation films grew preferentially. In addition, it was found that the native defects, mainly oxygen vacancies, decreased by absorbing oxygen molecules, 17 resulting in an increase in resistivity.…”

Section: Discussionmentioning

confidence: 99%

“…Details of the ALD growth can be found in our previous report. 17 In the present work, 18 O-labeled deionized (DI) water (Sigma-Aldrich, Ref.…”

Section: Methodsmentioning

confidence: 99%

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Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas via isotopic tracking

et al. 2021

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Section: Discussionsupporting

confidence: 91%

Section: Discussionmentioning

confidence: 55%

Section: Introductionmentioning

confidence: 83%

Section: Discussionmentioning

confidence: 99%

“…Details of the ALD growth can be found in our previous report. 17 In the present work, 18 O-labeled deionized (DI) water (Sigma-Aldrich, Ref.…”

Section: Methodsmentioning

confidence: 99%

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Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas via isotopic tracking

et al. 2021

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Direct‐Patterning ZnO Deposition by Atomic‐Layer Additive Manufacturing Using a Safe and Economical Precursor

Stefanovic

Gheshlaghi

Zanders

et al. 2023

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Area‐selective atomic layer deposition (AS‐ALD) is a bottom‐up nanofabrication method delivering single atoms from a molecular precursor. AS‐ALD enables self‐aligned fabrication and outperforms lithography in terms of cost, resistance, and equipment prerequisites, but it requires pre‐patterned substrates and is limited by insufficient selectivity and finite choice of substrates. These challenges are circumvented by direct patterning with atomic‐layer additive manufacturing (ALAM) — a transfer of 3D‐printing principles to atomic‐layer manufacturing where a precursor supply nozzle enables direct patterning instead of blanket coating. The reduced precursor vapor consumption in ALAM as compared with ALD calls for the use of less volatile precursors by replacing diethylzinc used traditionally in ALD with bis(dimethylaminopropyl)zinc, Zn(DMP)2. The behavior of this novel ZnO ALAM process follows that of the corresponding ALD in terms of deposit quality and growth characteristics. The temperature window for self‐limiting growth of stoichiometric, crystalline material is 200–250 °C. The growth rates are 0.9 Å per cycle in ALD (determined by spectroscopic ellipsometry) and 1.1 Å per pass in ALAM (imaging ellipsometry). The preferential crystal orientation increases with temperature, while energy‐dispersive X‐ray spectroscopic and XPS show that only intermediate temperatures deliver stoichiometric ZnO. A functional thin‐film transistor is created from an ALAM‐deposited ZnO line and characterized.

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Impact of aluminium doping in magnesium-doped zinc oxide thin films by sputtering for photovoltaic applications

Rahman,

Rokonuzzaman

et al. 2024

J Mater Sci

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In this study, Mg-doped zinc oxide (MZO) thin films were deposited through radio frequency (RF) sputtering for different substrate temperatures ranging from room temperature (25 °C) to 350 °C. XRD analysis depicted that the higher substrate temperatures lead to increased crystallite size. From the UV–Vis spectroscopy, transmittance (T) was found approximately 95% and the optical band energy gap (Eg) was determined around 3.70 eV. Hall effect measurement system measured the carrier concentration and resistivity of all films in the order of 1014 cm−3 and 103 Ω-cm, respectively. Since the structural and optoelectrical properties of the MZO films were not significantly affected by the substrate temperatures, Aluminium (Al) was co-doped in the MZO film to improve structural and optoelectrical properties. As a result, the carrier concentration of Al doped MZO (AMZO) films was increased up to ~ 1020 cm−3 from ~ 1014 cm3 (MZO), and the resistivity was decreased up to ~ 10–1 Ω-cm from 103 Ω-cm (MZO) representing the significant changes in electrical properties without affecting the transmittance. This study opens a pathway for improving the MZO buffer layer that can enhance the cell performance of CdTe solar cells. Graphical abstract

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Controlling electrical and optical properties of zinc oxide thin films grown by thermal atomic layer deposition with oxygen gas

Cited by 24 publications

References 70 publications

Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas via isotopic tracking

Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas via isotopic tracking

Direct‐Patterning ZnO Deposition by Atomic‐Layer Additive Manufacturing Using a Safe and Economical Precursor

Impact of aluminium doping in magnesium-doped zinc oxide thin films by sputtering for photovoltaic applications

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