Controlling a Nanowire Quantum Dot Band Gap Using a Straining Dielectric Envelope

Abstract

We tune the emission wavelength of an InAsP quantum dot in an InP nanowire over 200 meV by depositing a SiO(2) envelope using plasma-enhanced chemical vapor deposition without deterioration of the optical quality. This SiO(2) envelope generates a controlled static strain field. Both red and blue shift can be easily achieved by controlling the deposition conditions of the SiO(2). Using atomistic empirical tight-binding calculations, we investigate the effect of strain on a quantum dot band structure for different compositions, shape, and crystal orientations. From the calculations, we estimate the applied strain in our experiment. This enables engineering of the band gap in nanowires with unprecedented possibilities to extend the application range of nanowire devices.

From quantum dots to quantum dashes: Excitonic spectra of highly elongated InAs/InP nanostructures

“…[1][2][3][4] Potential usage of these systems involves single photons and entangled photons generation, [5][6][7][8] with applications in quantum information and quantum communication. [9][10][11] The realm of InAs/InP nanostructures is rich and varies from more conventional cylindrical self-assembled, 12,13 and nanowire quantum dots [14][15][16] to rather unconventional semiconductor nanostructures with characteristic large in-plane elongation, known as quantum dashes. [17][18][19][20][21][22][23][24][25][26][27] Quantum dashes have demonstrated their potential for utilization in e.g.…”

Tuning the Optical, Magnetic, and Electrical Properties of ReSe2 by Nanoscale Strain Engineering

“…This red shift in PL peak position implies that the local strain on the top of the wrinkle changes the electronic structure of ReSe 2. 19,20 . 19,20 .…”

Spectra of dark and bright excitons in alloyed nanowire quantum dots

“…7,[36][37][38][39][40][41][42][43][44][45] Further research focused also on the growth itself, by using ripening 46 process, droplet epitaxy for low-strain QDs 47 or vapor-liquid-solid (VLS) growth of nanowire QDs (NWQDs). [48][49][50][51][52][53] The general idea is to restore high symmetry of a QD to reduce its fine structure splitting. This is particularly based on theoretical predictions 11,31,32 indicating that the triangular (C 3v ) symmetry of a nanostructure will lead to the vanishing BES.…”

“…In case of VLS lithogra-phy and NWQDs alloying is unavoidable and origins from the presence of the eutectic growth seed. 56 It leads to a pronounced, up to 80%, 52,57 intermixing of the barrier (InP) material into (InAs) QD region effectively producing heavily alloyed (e.g. InAs 0.2 P 0.8 ) NWQDs.…”