Controlled transfer of single charge carriers

Urbina, C.; Pothier, H.; Lafarge, P.; Orfila, P.F.; Estève, D.; Devoret, M. H.; Geerligs, L.J.; Anderegg, V.F.; Holweg, P.A.M.; Mooij, J. E.

doi:10.1109/20.133742

Cited by 29 publications

(8 citation statements)

References 5 publications

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“…In the early 90's the first turnstiles were made at Delft University of Technology [13,46,47] and the first electron pumps were fabricated at the Centre d'Etudes Nucléaires de Saclay [14,48].…”

Section: Uncertaintymentioning

confidence: 99%

Towards Single-Electron Metrology

Flensberg

Odintsov

Liefrink

et al. 1999

Int. J. Mod. Phys. B

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We review the status of the understanding of single-electron transport (SET) devices with respect to their applicability in metrology. Their envisioned role as the basis of a high-precision electrical standard is outlined and is discussed in the context of other standards. The operation principles of single electron transistors, turnstiles and pumps are explained and the fundamental limits of these devices are discussed in detail. We describe the various physical mechanisms that influence the device uncertainty and review the analytical and numerical methods needed to calculate the intrinsic uncertainty and to optimise the fabrication and operation parameters. Recent experimental results are evaluated and compared with theoretical predictions. Although there are discrepancies between theory and experiments, the intrinsic uncertainty is already small enough to start preparing for the first SET-based metrological applications. DFM-98-R27Towards single-electron metrology 2

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Section: Uncertaintymentioning

confidence: 99%

Towards Single-Electron Metrology

Flensberg

Odintsov

Liefrink

et al. 1999

Int. J. Mod. Phys. B

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“…They set a limit to the accuracy of SET devices such as turnstiles and pumps (in which an ac signal of frequency f applied to the gates clocks the transfer of single electrons), and the storing times of traps (capable to hold an electron on a memory node of the circuit for long periods). Because of the cotunneling, a 4-junction SET turnstile and a 3-junction pump [4] realize relation I = ef with an accuracy of about 1% only, which is insufficient for their applications in metrology [5]. The 4-junction SET traps made by Fulton et al [6] and Lafarge et al [7] had maximum trapping times as short as ∼ 1 s.…”

mentioning

confidence: 99%

Storage capabilities of a four-junction single-electron trap with an on-chip resistor

Lotkhov

Zangerle

Zorin

et al. 1999

Applied Physics Letters

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We report on the operation of a single electron trap comprising a chain of four Al/AlOx/Al tunnel junctions attached, at one side, to a memory island and, at the other side, to a miniature on-chip Cr resistor (R ≈ 50 kΩ) which served to suppress cotunneling. At appropriate voltage bias the bistable states of the trap, with the charges differing by the elementary charge e, were realized. At low temperature, spontaneous switching between these states was found to be infrequent. For instance, at T =70 mK the system was capable of holding an electron for more than 2 hours, this time being limited by the time of the measurement.

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“…We expect that the exponential segments in Figure 6 will become invisible, and that the frequency dependence of the trapping error will become a pure power law. Such a study is particularly relevant to devices based on metal islands [1][2][3][4], where the single particle levels form a continuum.…”

Section: Power Law Of Hot Electron Relaxationmentioning

confidence: 99%

“…For a sufficiently clean and large metal island, we may use the Fermi liquid formula γ ee = (δE) 2 hE f to estimate the inelastic relaxation rate of an electron of energy δE above the Fermi energy E f of the metal island, where we have assumed that the temperature of the background electrons is much smaller than δE [35]. The relaxation rate is found from this as 0.2 × 10 6 /s for an Al island with δE =0.1 meV.…”

Section: Relaxation Due To Background Electronsmentioning

confidence: 99%

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Non-equilibrium effects and self-heating in single-electron Coulomb blockade devices

Liu

Niu

1997

Physics Reports

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We present a comprehensive investigation of nonequilibrium effects and self heating in single electron transfer devices based primarily on the Coulomb blockade effect. During an electron trapping process, a hot electron may be deposited in a quantum dot or metal island, with an extra energy usually on the order of the Coulomb charging energy, which is much higher than the temperature in typical experiments. The hot electron may relax through three channels: tunneling back and forth to the feeding lead (or island), emitting phonons, and exciting background electrons. Depending on the magnitudes of the rates in

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Controlled transfer of single charge carriers

Cited by 29 publications

References 5 publications

Towards Single-Electron Metrology

Towards Single-Electron Metrology

Storage capabilities of a four-junction single-electron trap with an on-chip resistor

Non-equilibrium effects and self-heating in single-electron Coulomb blockade devices

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