Controlled Synthesis of Triangular Submicron-Sized CeO2 and Its Polishing Performance

Abstract

CeO2 is widely used in the field of chemical–mechanical polishing for integrated circuits. Morphology, particle size, crystallinity, and Ce3+ concentration are crucial factors that affect polishing performance. In this study, we successfully synthesized two novel triangular CeO2 abrasives with similar particle sizes (600 nm) but different morphologies and Ce3+ concentrations using a microwave-assisted hydrothermal method with high-concentration raw materials, and no surfactants or template agents were added. It is generally believed that CeO2 with a higher Ce3+ concentration leads to better polishing performance. However, the results of polishing indicate that CeO2 synthesized at 200 °C, despite its lower Ce3+ concentration, demonstrates outstanding polishing performance, achieving a polishing rate of 324 nm/min, and the Sa of Si wafers decreased by 3.6% after polishing. This suggests that, under similar particle size conditions, the morphology of CeO2 plays a dominant role in the mechanical effects during the polishing process. Additionally, compared to commercial polishing slurries, the synthesized samples demonstrated better polishing performance. This indicates that, in CMP, the pursuit of smaller spherical abrasives may not be necessary. Instead, the appropriate shape and particle size can better balance the material removal rate and surface roughness.