2022
DOI: 10.3390/cryst13010005
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Controlled Synthesis and Growth Mechanism of Two-Dimensional Zinc Oxide by Surfactant-Assisted Ion-Layer Epitaxy

Abstract: Two-dimensional (2D) zinc oxide (ZnO) has attracted much attention for its potential applications in electronics, optoelectronics, ultraviolet photodetectors, and resistive sensors. However, little attention has been focused on the growth mechanism, which is highly desired for practical applications. In this paper, the growth mechanism of 2D ZnO by surfactant-assisted ion-layer epitaxy (SA-ILE) is explored by controlling the amounts of surfactant, temperature, precursor concentration, and growth time. It is fo… Show more

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Cited by 2 publications
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“…The proposed new mechanism can not only help deepen the understanding of the formation and evolution of the seedlayer, but also provide a new method for the controllable growth of nanomaterials. Continuing with the growth mechanism study, Huang et al [2] investigated the controlled synthesis and the growth mechanism of two-dimensional (2D) ZnO by surfactant-assisted ion-layer epitaxy (SA-ILE), by controlling the growth parameters, such as the amounts of surfactant, temperature, precursor concentration, and growth time. Their work might guide the development of SA-ILE and pave the way for practical applications of 2D ZnO on photodetectors, sensors, and resistive switching devices.…”
mentioning
confidence: 99%
“…The proposed new mechanism can not only help deepen the understanding of the formation and evolution of the seedlayer, but also provide a new method for the controllable growth of nanomaterials. Continuing with the growth mechanism study, Huang et al [2] investigated the controlled synthesis and the growth mechanism of two-dimensional (2D) ZnO by surfactant-assisted ion-layer epitaxy (SA-ILE), by controlling the growth parameters, such as the amounts of surfactant, temperature, precursor concentration, and growth time. Their work might guide the development of SA-ILE and pave the way for practical applications of 2D ZnO on photodetectors, sensors, and resistive switching devices.…”
mentioning
confidence: 99%