Controlled pulse-etching with xenon difluoride

Chu, Patrick; Chen, J.T.; Yeh, Richard; Lin, G.; Huang, J.C.; Warneke, B.; Pister, S.J.

doi:10.1109/sensor.1997.613739

Cited by 85 publications

(50 citation statements)

References 8 publications

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“…Since XeF 2 gas strongly reacts on the wall of the container and this makes the pressure inside the reaction chamber unstable, XeF 2 is usually supplied to the reaction chamber by pulse injection and evacuation (Chu et al, 1997;Sugano & Tabata, 2002). Fig.…”

Section: Control Of the Xef 2 Gas Pressurementioning

confidence: 99%

Synchrotron-radiation-stimulated etching of polydimethylsiloxane using XeF₂as a reaction gas

Chiang¹,

Makimura²,

He³

et al. 2009

J Synchrotron Radiat

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The synchrotron radiation (SR) stimulated etching of silicon elastomer polydimethylsiloxane (PDMS) using XeF 2 as an etching gas has been demonstrated. An etching system with differential pumps and two parabolic focusing mirrors was constructed to perform the etching. The PDMS was found to be effectively etched by the SR irradiation under the XeF 2 gas flow, and the etching process was area-selective and anisotropic. An extremely high etching rate of 40-50 mm (10 min) À1 was easily obtained at an XeF 2 gas pressure of 0.2-0.4 torr. This suggests that SR etching using XeF 2 gas provides a new microfabrication technology for thick PDMS membranes, which can open new applications such as the formation of three-dimensional microfluidic circuits.

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Section: Control Of the Xef 2 Gas Pressurementioning

confidence: 99%

Synchrotron-radiation-stimulated etching of polydimethylsiloxane using XeF₂as a reaction gas

Chiang¹,

Makimura²,

He³

et al. 2009

J Synchrotron Radiat

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“…Without this, XeF 2 etching proceeds very nonuniformly from hole to hole. XeF 2 etching is performed in pulsed mode [9]. Due to the transparency of parylene, it is possible to observe the progress of the etching.…”

Section: Fabricationmentioning

confidence: 99%

Parylene-membrane piezoresistive pressure sensors with XeF<inf>2</inf>-etched cavity

Giacchino

Tai

2008

2008 IEEE Sensors

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Abstract-Pressure sensors have been fabricated based on a deformable parylene C membrane over a cavity etched in silicon. The cavity is obtained by XeF2 etching, using a parylene mask composed of an array of holes. A subsequent parylene deposition fills the holes, thus sealing the cavity and completing the membrane. Gold piezoresistors are used to sense the membrane deformation.Compared to traditional pressure sensor designs, this process is more easily integrated into other processes, as no double-side machining or wet silicon etching is needed.The use of parylene is advantageous under certain points of view. First, it protects the piezoresistors and silicon, due to its well known barrier and chemical inertness properties. Second, contrary to other materials commonly used to fabricate pressure sensor membranes (e.g., polysilicon, silicon nitride), parylene is flexible, and thus more resistant to shocks. These two reasons make the sensor useful in chemically and physically harsh environments.

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“…Openings left in each SiO layer form the beam sidewalls and act as "etch openings" for the post-process micromachining step. A pulsed xenon difluoride etching process [6] was used to remove isotropically the silicon beneath each beam, mechanically releasing it from the underlying substrate. The compressive stress in the released film leads to the buckled profile shown in Fig.…”

Section: Test Structure Design and Fabricationmentioning

confidence: 99%

IC test structures for multilayer interconnect stress determination

Smee

Gaitan

Novotny

et al. 2000

IEEE Electron Device Lett.

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A new method for measuring strain in multilayer integrated circuit (IC) interconnects is presented. This method utilizes process compatible MEMS-based test structures and is applied to the determination of longitudinal interconnect stress in a standard dual-metal-layer CMOS process. Strain measurements are shown to be consistent for an array of similar test structures. Stress values, calculated from constitutive relations, are in good agreement with published results.

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Controlled pulse-etching with xenon difluoride

Cited by 85 publications

References 8 publications

Synchrotron-radiation-stimulated etching of polydimethylsiloxane using XeF₂as a reaction gas

Synchrotron-radiation-stimulated etching of polydimethylsiloxane using XeF₂as a reaction gas

Parylene-membrane piezoresistive pressure sensors with XeF<inf>2</inf>-etched cavity

IC test structures for multilayer interconnect stress determination

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Controlled pulse-etching with xenon difluoride

Cited by 85 publications

References 8 publications

Synchrotron-radiation-stimulated etching of polydimethylsiloxane using XeF2as a reaction gas

Synchrotron-radiation-stimulated etching of polydimethylsiloxane using XeF2as a reaction gas

Parylene-membrane piezoresistive pressure sensors with XeF<inf>2</inf>-etched cavity

IC test structures for multilayer interconnect stress determination

Contact Info

Product

Resources

About

Synchrotron-radiation-stimulated etching of polydimethylsiloxane using XeF₂as a reaction gas

Synchrotron-radiation-stimulated etching of polydimethylsiloxane using XeF₂as a reaction gas