Controlled Processes of the Parameters Transformation by Ion Beams in Silicon Bipolar Microwave Transistors

Abstract

The paper considers the formation of a transition layer of Mo - Si contacts, as well as the effect of Mo film deposition regimes and methods of heat treatment of contacts. It was found that when forming contacts of microwave transistors, by deposition of a Mo film on the surface of an epitaxial silicon layer, the structure of the latter depends on the dose of doping with phosphorus ions and on the temperature of post-implantation annealing. The results of experiments and two-dimensional physico-mathematical modeling to study the dependence of the parameters of test samples of the KT916A transistor depending on the dose of matching the emitters with phosphorus ions through a molybdenum film are presented. It is shown that with an increase in the doping dose, the surface and maximum concentration of phosphorus increases. At the same time, both energy and frequency characteristics of the transistor are improved, and the radiation resistance increases.