Controlled Growth of Yttrium Oxysulphide Thin Films by Atomic Layer Deposition

Kukli, Kaupo; Peussa, Marko; Johansson, L-S.; Nykänen, E.; Niinistö, Lauri

doi:10.4028/www.scientific.net/msf.315-317.216

Cited by 14 publications

(5 citation statements)

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“…In the majority of cases found in Tables –, the supercycle scheme is used to combine two separate binary ALD processes that share one element (e.g., O, N, S) into a single ternary process. Some studies implement deposition with multiconstituent precursors to introduce more than one atom into the film with a single precursor, ,,− ,,,,− and others eschew the supercycle pulsing strategy in other ways ,,,− ,− as discussed in Section ; however, these are far less common among the works shown in the tables. Regarding the use of these alternative approaches, Si-containing compounds are of particular note as SiO 2 itself is often difficult to grow on its own. ,,,,,, A number of studies have successfully deposited Si-containing materials by ALD by using precursor strategies other than supercycles.…”

Section: Overview Of Ternary and Quaternary Ald Processesmentioning

confidence: 99%

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

et al. 2018

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In the past decade, atomic layer deposition (ALD) has become an important thin film deposition technique for applications in nanoelectronics, catalysis, and other areas due to its high conformality on 3-D nanostructured substrates and control of the film thickness at the atomic level. The current applications of ALD primarily involve binary metal oxides, but for new applications there is increasing interest in more complex materials such as doped, ternary, and quaternary materials. This article reviews how these multicomponent materials can be synthesized by ALD, gives an overview of the materials that have been reported in the literature to date, and discusses important challenges. The most commonly employed approach to synthesize these materials is to combine binary ALD cycles in a supercycle, which provides the ability to control the composition of the material by choosing the cycle ratio. Discussion will focus on four main topics: (i) the characteristics, benefits, and drawbacks of the approaches that currently exist for the synthesis of multicomponent materials, with special attention to the supercycle approach; (ii) the trends in precursor choice, process conditions, and characterization methods, as well as underlying motivations for these design decisions; (iii) the distribution of atoms in the deposited material and the formation of specific (crystalline) phases, which is shown to be dependent on the ALD cycle sequence, deposition temperature, and post-deposition anneal conditions; and (iv) the nucleation effects that occur when switching from one binary ALD process to another, with different explanations provided for why the growth characteristics often deviate from what is expected. This paper provides insight into how the deposition conditions (cycle sequence, temperature, etc.) affect the properties of the resultant thin films, which can serve as a guideline for designing new ALD processes. Furthermore, with an extensive discussion on the nucleation effects taking place during the growth of ternary materials, we hope to contribute to a better understanding of the underlying mechanisms of the ALD growth of multicomponent materials.

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Section: Overview Of Ternary and Quaternary Ald Processesmentioning

confidence: 99%

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

et al. 2018

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“…The aim of the present work was to discover if YF 3 thin films can be deposited by ALD using TiF 4 as a fluorinating agent, while using Y(thd) 3 as a cation precursor. Y(thd) 3 has already been used in ALD for depositing, e.g., Y 2 O 3 , [30][31][32][33] YScO 3 , [34] and Y 2 O 2 S [35] thin films. Another aim (given that the reaction took place) was to study various film properties including the composition of the films, because the key question is how complete the reaction can be, i.e., how completely thd ligands, and especially Ti atoms, can be eliminated from the final film.…”

Section: Full Papermentioning

confidence: 99%

ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors

Pilvi

Puukilainen

Munnik

et al. 2009

Chemical Vapor Deposition

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Yttrium fluoride (YF 3 ) is a dielectric material with good light transmittance between the ultraviolet (UV) and infrared (IR) range of wavelengths. In this paper we introduce the first use of the atomic layer deposition (ALD) of YF 3 thin films. The films are grown at 175-325 8C. Y(thd) 3 (thd ¼ 2,2,6,6-tetramethyl-3,5-heptanedionato) is used as a cation source and TiF 4 as a fluorine precursor. YF 3 film growth characteristics, together with structural, optical, and electrical properties, are studied. Various methods, such as spectrophotometry, X-ray diffractometry (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and elastic recoil detection analysis (ERDA) are applied to characterize the films. Electrical properties are analyzed from Al/YF 3 /indium-tin-oxide capacitor structures at room temperature. The growth rates of the films are between 1.1 and 1.7 Å per cycle. The films grown below 225 8C are amorphous, otherwise they are polycrystalline. The impurities detected in the YF 3 film are H, C, O, and Ti. The amount of all of these tends to decrease with increasing deposition temperature, and is only 3.0 at.-% at 325 8C. Permittivities of the films are around 6. The refractive indices are 1.51-1.59 (at l ¼ 580 nm), and high light transmittance is achieved from the UV to IR regions with the sample grown at 300 8C.

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“…6 Yttrium oxysulfide films were reported to be deposited by atomic layer deposition (ALD) and multisource deposition (MSD) methods. 7,8 In this paper, we fabricated europium-activated yttrium oxysulfide thin films utilizing a simple method of H 2 S/Ar annealing of Y 2 O 3 :Eu films that provided the opportunity to study the characteristics of as-deposited H 2 S/Ar-and air-annealed films and to compare their structural, optical, and luminescent properties.…”

Section: Introductionmentioning

confidence: 99%

Properties and cathodoluminescence of Y₂O₂S:Eu thin films

Sychov¹,

Nakanishi²,

Nakajima³

et al. 2003

J Soc Info Display

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Abstract— Europium‐activated yttrium oxysulfide thin films were fabricated by electron‐beam deposition of Y2O2S:Eu with consequent annealing in an H2S/Ar gas mixture. Transformations in film composition and surface morphology as well as corresponding changes in the optical, photoluminescent, and cathodoluminescent properties were studied and will be discussed. It is shown that 248‐nm laser irradiation of heat‐treated films improves cathodoluminescence by as much as 30%, supposedly due to annealing. The developed phosphor films have a luminance comparable to that of annealed europium‐activated yttrium oxide films and improved color properties (CIE color coordinates: x = 0.624, y = 0.329), and are suitable for display and optoelectronics applications.

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Controlled Growth of Yttrium Oxysulphide Thin Films by Atomic Layer Deposition

Cited by 14 publications

References 0 publications

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors

Properties and cathodoluminescence of Y₂O₂S:Eu thin films

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Controlled Growth of Yttrium Oxysulphide Thin Films by Atomic Layer Deposition

Cited by 14 publications

References 0 publications

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

ALD of YF3 Thin Films from TiF4 and Y(thd)3 Precursors

Properties and cathodoluminescence of Y2O2S:Eu thin films

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ALD of YF₃ Thin Films from TiF₄ and Y(thd)₃ Precursors

Properties and cathodoluminescence of Y₂O₂S:Eu thin films