Controlled Growth of Single‐Crystal Twelve‐Pointed Graphene Grains on a Liquid Cu Surface

Geng, Dechao; Meng, Lan; Chen, Bingyan; Gao, Enlai; Yan, Wei; Yan, Hui; Luo, Birong; Xu, Jie; Wang, Huaping; Mao, Zupan; Xu, Zhiping; He, Lin; Zhang, Zhiyong; Peng, Lian‐Mao; Yu, Gui

doi:10.1002/adma.201401277

Cited by 58 publications

(66 citation statements)

References 37 publications

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“…CVD‐grown graphene has made great breakthrough in the growth of large‐area graphene 17, 155, 156, 157, 158, 159, 160. Recently, the synthesis of 2DLMs via CVD methods has been illustrated in many reports especially for MoS 2 ,30, 31, 161, 162, 163, 164, 165, 166, 167, 168, 169, 170, 171, 172, 173, 174, 175, 176, 177, 178, 179, 180, 181, 182, 183, 184, 185 which also shows promising applications in electronics and optoelectronics.…”

Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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“…Considering one essential parameter, substrate selection, which dominates the growth mechanism and significantly influences the properties of as‐grown graphene, the CVD method can be divided into two main categories: catalyzed growth on metals and direct growth on semiconducting or dielectric substrates. Because catalysts can lower the thermodynamic barrier (and sometimes enhance kinetics) for carbon precursor dehydrogenation to facilitate graphene nucleation and growth, most of the transition metals listed in the periodic table have been used to catalyze graphene preparation . So far, a number of papers have reviewed metal‐related graphene CVD, covering adequate aspects, such as various metal substrates, growth mechanisms, large‐area single‐crystal growth, and so forth .…”

Section: Introductionmentioning

confidence: 99%

Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer‐Free Device Fabrication

Wang

2016

Advanced Materials

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121

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Graphene is the most broadly discussed and studied two-dimensional material because of its preeminent physical, mechanical, optical, and thermal properties. Until now, metal-catalyzed chemical vapor deposition (CVD) has been widely employed for the scalable production of high-quality graphene. However, in order to incorporate the graphene into electronic devices, a transfer process from metal substrates to targeted substrates is inevitable. This process usually results in contamination, wrinkling, and breakage of graphene samples - undesirable in graphene-based technology and not compatible with industrial production. Therefore, direct graphene growth on desired semiconductor and dielectric substrates is considered as an effective alternative. Over the past years, there have been intensive investigations to realize direct graphene growth using CVD methods without the catalytic role of metals. Owing to the low catalytic activity of non-metal substrates for carbon precursor decomposition and graphene growth, several strategies have been designed to facilitate and engineer graphene fabrication on semiconductors and insulators. Here, those developed strategies for direct CVD graphene growth on semiconductors and dielectrics for transfer-free fabrication of electronic devices are reviewed. By employing these methods, various graphene-related structures can be directly prepared on desired substrates and exhibit excellent performance, providing versatile routes for varied graphene-based materials fabrication.

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“…[28][29][30][31] Firstly, one does not have to worry about various heterogeneous nucleation sites that inevitably formed on solid Cu foil as a result of Cu melting. Secondly, it appears that a uniformity of the size of hexagonal graphene flakes can be easily controlled by tuning process parameters.…”

Section: Introductionmentioning

confidence: 99%

Self-assembly and continuous growth of hexagonal graphene flakes on liquid Cu

Cho

Kim

et al. 2015

Nanoscale

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Graphene growth on liquid Cu has received great interest, owing to the self-assembly behavior of hexagonal graphene flakes with aligned orientation and to the possibility of forming a single grain of graphene through a commensurate growth of these graphene flakes. Here, we propose and demonstrate a two-step growth process which allows the formation of self-assembled, completely continuous graphene on liquid Cu. After the formation of full coverage on the liquid Cu, grain boundaries were revealed via selective hydrogen etching and the original grain boundaries were clearly resolved. This result indicates that, while the flakes self-assembled with the same orientation, there still remain structural defects, gaps and voids that were not resolved by optical microscopy or scanning electron microscopy. To overcome this limitation, the two-step growth process was employed, consisting of a sequential process of a normal single-layer graphene growth and self-assembly process with a low carbon flux, followed by the final stage of graphene growth at a high degree of supersaturation with a high carbon flux. Continuity of the flakes was verified via hydrogen etching and a NaCl-assisted oxidation process, as well as by measuring the electrical properties of the graphene grown by the two-step process. Two-step growth can provide a continuous graphene layer, but commensurate stitching should be further studied.

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Controlled Growth of Single‐Crystal Twelve‐Pointed Graphene Grains on a Liquid Cu Surface

Cited by 58 publications

References 37 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer‐Free Device Fabrication

Self-assembly and continuous growth of hexagonal graphene flakes on liquid Cu

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