Controlled Growth of Non-Uniform Arsenic Profiles in Silicon Reduced-Pressure Chemical Vapor Deposition Epitaxial Layers

Popadic, M.; Scholtes, T.L.M.; Boer, Wiebe de; Sarubbi, F.; Nanver, L.K.

doi:10.1007/s11664-009-0897-x

Cited by 4 publications

(2 citation statements)

References 14 publications

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“…The background step-like As doped profile was epitaxially grown by CVD on 4-inch <100> n-type Si wafers at a reduced pressure of 60 Torr, and a temperature of 800 "C. As a consequence of As surface segregation during epitaxy a profile must be grown by first depositing a desired amount of As on the Si surface and then growing Si with a well-tuned arsine partial pressure [8]. By doing so, a section with flat doping will be grown and to obtain a drop in doping the deposited As must be ex-situ chemically removed [9].…”

Section: E Xperimenta L Proced Uresmentioning

confidence: 99%

C-V profiling of ultrashallow junctions using a step-like background doping profile

Popadic

Sarubbi

et al. 2009

2009 Proceedings of the European Solid State Device Research Conference

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but W cannot be related to x.; Differentially, obtained with a step-like background doping profile. Using this technique it is possible to extract part of the highly-doped ultrashallow profile by C-V profiling. We have employed this technique for the characterization of ultrashallow and ultraabrupt junctions formed by pure boron CVD that have been used in the fabrication of state-of-the-art DUV and EUV photodiodes for lithography [5].(2)where N d and N a represent the donor and acceptor doping concentrations, respectively, x; and x p the edges of the depletion region in the n-or p-region, respectively, e is the elementary charge, £s is the permittivity of the semiconductor, Va is the applied voltage and W is the depletion region width. The case of a one-sided junction is obtained from (1) by assuming that one doping approaches infinity, but if that assumption does not hold Na and N; cannot be both extracted simultaneously [6].In our approach two devices with an identical background n-type profile are fabricated: one as a Schottky diode for the purpose of accurate extraction of the N d profile, and one as a p-n diode for the extraction of the N; profile using the known N d profile. This alone, however is not sufficient as the edge of the depletion region on the n-side is at a different depth in the p-n case and in the Schottky case. Namely, in (1) Wis directly related to the measured capacitance C as II. PROFILING OF ULTRASHALLOW JUNCTIONSIn conventional C-V profiling a doping profile of a onesided junction (Schottky or highly asymmetrical p-n junction) is extracted from its C(V a ) dependence. However, if the junction is not one-sided then both p and n doping profiles contribute to the C( Va) characteristic. Assuming the depletion approximation, it is easily obtained that [3]

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Section: E Xperimenta L Proced Uresmentioning

confidence: 99%

C-V profiling of ultrashallow junctions using a step-like background doping profile

Popadic

Sarubbi

et al. 2009

2009 Proceedings of the European Solid State Device Research Conference

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“…However, using arsine is challenging due to its strong tendency to segregate on the surface and subsequent auto-doping behavior. Past work has shown that these properties can be controlled and applied with benefit to create special doping profiles [ 8 , 9 ]. Here a technique is developed for a controlled segregation, removal and auto-doping of As to obtain the required very lowly-doped profiles.…”

Section: Introductionmentioning

confidence: 99%

Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

et al. 2011

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An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm−3, a value that is solely limited by the cleanness of the epitaxial reactor chamber. To ensure such a low doping concentration, first an As-doped Si seed layer is grown with a concentration of 1016 to 1017 cm−3, after which the dopant gas arsine is turned off and a thick lightly-doped epi-layer is deposited. The final doping in the thick epi-layer relies on the segregation and incorporation of As from the seed layer, and it also depends on the final thickness of the layer, and the exact growth cycles. The obtained epi-layers exhibit a low density of stacking faults, an over-the-wafer doping uniformity of 3.6%, and a lifetime of generated carriers of more than 2.5 ms. Furthermore, the implementation of a segmented photodiode electron detector is demonstrated, featuring a 30 pF capacitance and a 90 Ω series resistance for a 7.6 mm2 anode area.

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C–V profiling of ultra-shallow junctions using step-like background profiles

Popadic

Milovanović

et al. 2010

Solid-State Electronics

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Controlled Growth of Non-Uniform Arsenic Profiles in Silicon Reduced-Pressure Chemical Vapor Deposition Epitaxial Layers

Cited by 4 publications

References 14 publications

C-V profiling of ultrashallow junctions using a step-like background doping profile

C-V profiling of ultrashallow junctions using a step-like background doping profile

Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

C–V profiling of ultra-shallow junctions using step-like background profiles

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