Controlled growth of a graphene charge-floating gate for organic non-volatile memory transistors

Park, Yunhwan; Park, Subeom; Jo, Insu; Hong, Byung Hee; Hong, Yongtaek

doi:10.1016/j.orgel.2015.09.017

Cited by 13 publications

(5 citation statements)

References 26 publications

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“…Figure a shows the representative I – V curves of device I-1. Typical bipolar resistive switching behaviors were observed, as reported in other studies. − Initially, device I-1 was in a high-resistance state (HRS), and it remained in this HRS at low voltages. When V was increased further, an abrupt transition to a low-resistance state (LRS) occurred at V ≈ 2.5 V ( V SET ).…”

Section: Resultssupporting

confidence: 78%

“…Multilevel systems provide an increased data storage density without reducing the size of a memory element. − For example, multilevel resistive memory switching was demonstrated in a ferroelectric phase-separated blend-based device and a cross-linkable dithienylethene-based device . A heterostructure consisting of graphene nanoflakes or graphene oxide sandwiched between polymer layers was also reported to exhibit the multilevel resistive memory switching, , although other researchers reported binary resistive switching in devices with a similar structure. − …”

Section: Introductionmentioning

confidence: 99%

“…Here, we report a nonvolatile memory device consisting of one (device I) or two graphene sheets (device II) embedded in poly(methyl methacrylate) (PMMA) polymer layers, as shown schematically in Figure . Binary nonvolatile memory devices with a single sheet of graphene flakes , or graphene − embedded in a polymer layer were previously reported. However, graphene sheets can be stacked in a controlled manner because of their 2D property.…”

Section: Introductionmentioning

confidence: 99%

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Multilevel Nonvolatile Memristive and Memcapacitive Switching in Stacked Graphene Sheets

Park

Yoo

2016

ACS Appl. Mater. Interfaces

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We fabricated devices consisting of single and double graphene sheets embedded in organic polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Capacitance-voltage (C-V) curves and scanning capacitance microscopy (SCM) images were obtained to investigate the switching mechanism. The C-V curves exhibited a large hysteresis, implying that the graphene sheets acted as charging and discharging layers and that resistive switching was caused by charges trapped in the graphene layers. In addition, binary capacitive switching behaviors were observed for the device with a single graphene sheet, and ternary capacitive switching behaviors were observed for the device with the double graphene sheets. These results demonstrated that devices consisting of graphene sheets embedded in the polymer layers can be applied to multilevel nonvolatile memcapacitive devices as well as memristive devices.

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Section: Resultssupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Multilevel Nonvolatile Memristive and Memcapacitive Switching in Stacked Graphene Sheets

Park

Yoo

2016

ACS Appl. Mater. Interfaces

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“…Organic field-effect transistors (OFETs) have attracted significant attention as a key switching device in next-generation flexible electronics. − With rapid progress in OFETs in recent years, the integration of additional functions into the OFETs have been widely proposed. − For example, nonvolatile memories based on OFETs have been developed due to the advantages of nondestructive read-out properties and good compatibility with soft integrated circuits on flexible substrates. − Beyond the OFET-type memories modulated only by electrical stress, recently numerous studies have attempted to utilize light as the impetus for electrical responses and have thus expanded their applications to optical memories. − OFET-type optical memories have many advantages because they do not require high voltage biases for programming and erasing. In particular, with the aid of light bias, small magnitudes of electrical stresses can be enough to produce large memory windows (i.e., threshold difference after programing/erasing processes).…”

Section: Introductionmentioning

confidence: 99%

Photoinduced Recovery of Organic Transistor Memories with Photoactive Floating-Gate Interlayers

Jeong

Yun

Kim

et al. 2017

ACS Appl. Mater. Interfaces

123

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Optical memories based on photoresponsive organic field-effect transistors (OFETs) are of great interest due to their unique applications, such as multibit storage memories and flexible imaging circuits. Most studies of OFET-type memories have focused on the photoresponsive active channels, but more useful functions can be additionally given to the devices by using floating gates that can absorb light. In this case, effects of photoirradiation on photoactive floating-gate layers need to be fully understood. Herein, we studied the photoinduced erasing effects of floating-gate interlayers on the electrical responses of OFET-type memories and considered the possible mechanisms. Polymer/C composites were inserted between pentacene and SiO to form photoresponsive floating-gate interlayers in transistor memory. When exposed to light, C generated excitons, and these photoexcited carriers contributed to the elimination of trapped charge carriers, which resulted in the recovery of OFET performance. Such memory devices exhibited bistable current states controlled with voltage-driven programming and light-driven erasure. Furthermore, these devices maintained their charge-storing properties over 10 000 s. This proof-of-concept study is expected to open up new avenues in information technology for the development of organic memories that exhibit photoinduced recovery over a wide range of wavelengths of light when combined with appropriate photoactive floating-gate materials.

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“…[25][26][27][28] The electrons or holes are trapped in the floating gate, and so the device performance are closely related to the reliable trapping in the charge-accepting elements. In previous reports, metallic nanoparticles (Au, Ag, or Al), [29,30] 2D inorganic nanomaterials (graphene, reduced graphene oxide, M O S 2 nanosheet), [31][32][33] and organic semiconductors ( [6,6]-phenyl-C61-butyric acid methyl ester [PCBM], ferrocene, etc. ), [26,34] added into insulating polymers (polystyrene [PS], polymethyl methacrylate, etc.)…”

Section: Introductionmentioning

confidence: 99%

Ultrathin Metal–Organic Framework Nanosheets as Nano‐Floating‐Gate for High Performance Transistor Memory Device

Shi

Zhang

Ding

et al. 2021

Adv Funct Materials

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Metal–organic framework (MOF) is an emerging important class of functional materials in the fields of information storage, wearable electronics and optoelectronic devices. The interaction of electrons or holes with MOFs is important for the systematic exploration of MOFtronics and to investigate the related structure–performance correlation. Herein, MOF flat nanosheets of copper tetrakis(4‐carboxyphenyl)porphyrin with sub‐10 nanometer scale in thickness are employed as the charge‐trapping layer in organic field‐effect floating‐gate transistor memory device fabricated by an air–liquid interfacial assembly and subsequent stamping operation. As charge trapping sites, MOF nanosheets with ultrathin nanoporous arrays significantly improve in comparison with the memory device using its counterpart ligand of tetrakis(4‐carboxyphenyl)porphyrin as the trapping elements. As compared to the reported widely applied nanofloating gate materials of gold nanoparticles, graphene, or macromolecular nanomaterials, a short pulse (≈20 ms) on the device gets a considerable memory window of ≈37.5 V at a programming voltage of ‐80 V, with a retention time longer than 104 s and good ON/OFF ratio of >103. Furthermore, the hybrid structure composed of metal and organic components endows it with electron and hole trapping capability. This work could push forward the fundamental research of organic–inorganic–hybrid electronics in future microelectronic research.

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Controlled growth of a graphene charge-floating gate for organic non-volatile memory transistors

Cited by 13 publications

References 26 publications

Multilevel Nonvolatile Memristive and Memcapacitive Switching in Stacked Graphene Sheets

Multilevel Nonvolatile Memristive and Memcapacitive Switching in Stacked Graphene Sheets

Photoinduced Recovery of Organic Transistor Memories with Photoactive Floating-Gate Interlayers

Ultrathin Metal–Organic Framework Nanosheets as Nano‐Floating‐Gate for High Performance Transistor Memory Device

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