Controlled formation of nanoscale MnAs magnetic clusters in GaAs

Boeck, J. De; Oesterholt, R.; Bender, Hugo; Esch, A. Van; Bruynseraede, C.; Hoof, Chris Van; Borghs, Gustaaf

doi:10.1016/0304-8853(95)00821-7

Cited by 26 publications

(20 citation statements)

References 7 publications

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“…Careful low temperature annealing can result in improved magnetic behavior due to the reduction of Mn interstials [32], but at elevated temperatures can result in second phase segregation [33]. The growth and annealing effects in Ga 1-x Mn x N are less well established.…”

Section: Obstacles To Ferromagnetic Applications Of Gamnnmentioning

confidence: 99%

Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices

et al. 2005

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This work focuses on the development of materials and growth techniques suitable for future spintronic device applications. Metal-organic chemical vapor deposition (MOCVD) was used to grow high-quality epitaxial films of varying thickness and manganese doping levels by introducing bis-cyclopentadienyl as the manganese source. Highresolution X-ray diffraction indicates that no macroscopic second phases are formed during growth, and Mn containing films are similar in crystalline quality to undoped films Atomic force microscopy revealed a 2-dimensional MOCVD step-flow growth pattern in the Mn-incorporated samples. The mean surface roughnesses of optimally grown Ga 1-x Mn x N films were almost identical to that from the as-grown template layers, with no change in growth mechanism or morphology. Various annealing steps were applied to some of the samples to reduce compensating defects and to investigate the effects of post processing on the structural, magnetic and opto-electronic properties. SQUID measurements showed an apparent ferromagnetic hysteresis behavior which persisted to room temperature. An optical absorption band around 1.5 eV was observed via transmission studies. This band is assigned to the internal Mn 3+ transition between the 5 E and the partially filled 5 T 2 levels of the 5 D state. The broadening of the absorption band is introduced by the high Mn concentration. Recharging of the Mn 3+ to Mn 2+ was found to effectively suppress these transitions resulting in a reduction of the magnetization. The structural quality, and the presence of Mn 2+ ions were confirmed by EPR spectroscopy, meanwhile no Mn-Mn interactions indicative of clustering were observed. The absence of doping-induced strain in Ga 1-x Mn x N was observed by Raman spectroscopy.

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Section: Obstacles To Ferromagnetic Applications Of Gamnnmentioning

confidence: 99%

Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices

et al. 2005

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“…The enhanced positive magneto-resistance in GaAs with nanomagnet clusters embedded by Mn ion implantation under light illumination have been reported [3]. MnAs nanoclusters embedded in GaAs can be obtained by annealing MBE growth (Ga, Mn)As at 500-600 o C [4][5][6][7][8]. The absorption and magneto-optical properties of GaAs : MnAs are strongly dependent on its cluster size.…”

Section: Introductionmentioning

confidence: 96%

Effect of thermal annealing of high temperature growth [(GaAs) m (Fe) n ] p composite films on GaAs(001) by molecular beam epitaxy

Jamil

Noguchi

2011

Indian J Phys

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GaAs) m (Fe) n ] p composite films on GaAs(001) substrates obtained by molecular beam deposition methods at T s = 580°C have been thermally annealed, and magnetic/structural changes caused by the annealing have been measured to study the relation between room-temperature photo-magnetic effect and by-products in composite films. Annealing inhomogeneous [(GaAs) 8 (Fe) 5 ] 20 film, prepared by alternate beam deposition of Fe and GaAs, results in an increase in saturation magnetization, whereas the room-temperature photo-enhanced magnetization (RT-PEM) vanishes. Metamagnetic Fe 3 Ga 4 is suppressed with the formation of ferromagnetic Fe 3 Ga 2-x As x . Observed results suggest two important points : firstly, metamagnetic Fe 3 Ga 4 compound is most likely meta-stable bi-product and may play a principle role for RT-PEM, and secondly, ferromagnetic Fe 3 GaAs and its derivatives are the stable form in Ga-As-Fe ternary system.

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“…For example, Ga 1-x Mn x As is grown almost exclusively by low temperature molecular beam epitaxy [1,6], and during growth and annealing there is always a competition between the dilute Ga 1-x Mn x As phase and the MnAs second phase. Careful low temperature annealing can result in improved magnetic behavior due to the reduction of Mn interstials [7], but at elevated temperatures can result in second phase segregation [8]. The growth and annealing effects in Ga 1-x Mn x N are less well established.…”

Section: Introductionmentioning

confidence: 99%

Impact of Manganese incorporation on the structural and magnetic properties of MOCVD-grown Ga_1−xMn_xN

et al. 2004

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This paper reports the impact of the Mn incorporation on the structural and magnetic properties of Ga 1-x Mn x N on the metal-organic vapor phase deposition (MOCVD). Crystalline quality and phase purity were determined by high-resolution X-ray diffraction and indicated that no macroscopic second phases are formed during growth. Atomic force microscopy revealed a 2-dimensional MOCVD step-flow growth pattern in the Mn-incorporated samples. Various annealing steps were applied to some of the samples to reduce compensating defects and to investigate the effects of post processing on the growth. SQUID measurements showed an apparent ferromagnetic hysteresis behavior. However, none of the requirements for room temperature ferromagnetism in the prevailing mean field DMS theories were found. Therefore, different origins of the ferromagnetic signal are discussed.

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Controlled formation of nanoscale MnAs magnetic clusters in GaAs

Cited by 26 publications

References 7 publications

Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices

Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices

Effect of thermal annealing of high temperature growth [(GaAs) m (Fe) n ] p composite films on GaAs(001) by molecular beam epitaxy

Impact of Manganese incorporation on the structural and magnetic properties of MOCVD-grown Ga_1−xMn_xN

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Controlled formation of nanoscale MnAs magnetic clusters in GaAs

Cited by 26 publications

References 7 publications

Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices

Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices

Effect of thermal annealing of high temperature growth [(GaAs) m (Fe) n ] p composite films on GaAs(001) by molecular beam epitaxy

Impact of Manganese incorporation on the structural and magnetic properties of MOCVD-grown Ga1−xMnxN

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Impact of Manganese incorporation on the structural and magnetic properties of MOCVD-grown Ga_1−xMn_xN