Controlled epitaxial graphene growth within removable amorphous carbon corrals

Palmer, James; Kunc, Jan; Hu, Yusheng; Hankinson, John; Guo, Zelei; Berger, Claire; Heer, Walt A. de

doi:10.1063/1.4890499

Cited by 16 publications

(17 citation statements)

References 31 publications

(38 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Other strategies to improve graphene quality involve thermal decomposition of deposited polymer adsorbate which acts as a carbon source [13]. The SiC step bunching, as another issue reducing graphene mobility on SiC, has been solved by amorphous carbon step pinning [14]. The thermodynamics of stable phases that gov- * Electronic address: kunc@karlov.mff.cuni.cz erns the onset of graphene formation [5], oxidation [15] and other chemical reactions [16] has been discussed, too.…”

Section: Introductionmentioning

confidence: 99%

Effect of Residual Gas Composition on Epitaxial Growth of Graphene on SiC

et al. 2017

View full text Add to dashboard Cite

In recent years, graphene growth optimization has been one of the key routes towards large-scale, high-quality graphene production. We have measured in-situ residual gas content during epitaxial graphene growth on silicon carbide (SiC) to find detrimental factors of epitaxial graphene growth. The growth conditions in high vacuum and purified argon are compared. The grown epitaxial graphene is studied by Raman scattering mapping and mechanical strain, charge density, number of graphene layers and graphene grain size are evaluated. Charge density and carrier mobility has been studied by Hall effect measurements in van der Pauw configuration. We have identified a major role of chemical reaction of carbon and residual water. The rate of the reaction is lowered when purified argon is used. We also show, that according to time varying gas content, it is preferable to grow graphene at higher temperatures and shorter times. Other sources of growth environment contamination are also discussed. The reaction of water and carbon is discussed to be one of the factors increasing number of defects in graphene. The importance of purified argon and its sufficient flow rate is concluded to be important for high-quality graphene growth as it reduces the rate of undesired chemical reactions and provides more stable and defined growth ambient.

show abstract

Section: Introductionmentioning

confidence: 99%

Effect of Residual Gas Composition on Epitaxial Growth of Graphene on SiC

et al. 2017

View full text Add to dashboard Cite

show abstract

“…The 2D peak is predicted to have four components in the case of bilayer graphene. The single and four-component nature of the 2D peak was proved experimentally [22,23]. It is also known that the spectral position of the 2D peak is determined by the uniaxial [24][25][26][27] and biaxial [5,6,26] mechanical strain and charge density [7,8] of the graphene layer.…”

Section: Introductionmentioning

confidence: 84%

Raman 2D Peak Line Shape in Epigraphene on SiC

Kunc

Rejhon

2020

Applied Sciences

Self Cite

View full text Add to dashboard Cite

We measured a 2D peak line shape of epitaxial graphene grown on SiC in high vacuum, argon and graphene prepared by hydrogen intercalation from the so called buffer layer on a silicon face of SiC. We fitted the 2D peaks by Lorentzian and Voigt line shapes. The detailed analysis revealed that the Voigt line shape describes the 2D peak line shape better. We have determined the contribution of the homogeneous and inhomogeneous broadening. The homogeneous broadening is attributed to the intrinsic lifetime. Although the inhomogeneous broadening can be attributed to the spatial variations of the charge density, strain and overgrown graphene ribbons on the sub-micrometer length scales, we found dominant contribution of the strain fluctuations. The quasi free-standing graphene grown by hydrogen intercalation is shown to have the narrowest linewidth due to both homogeneous and inhomogeneous broadening.

show abstract

“…Upon thermal treatment the SiC steps are pinned under the amorphous carbon and steps displacement is confined to within each amorphous carbon enclosure. 37 This results in step bunching at one end of the enclosure and step alignment along the amorphous carbon corral, as demonstrated in Figure 4b-c. This technique demonstrates a significant improvement in SiC surface structuring by providing not only flat terraces of large size (Figure 4c -bottom) but most importantly at a predefined location.…”

Section: Monolayer Si-facementioning

confidence: 94%

Epitaxial Graphene on SiC: 2D Sheets, Selective Growth, and Nanoribbons

Berger¹,

Deniz²,

Gigliotti³

et al. 2017

Growing Graphene on Semiconductors

View full text Add to dashboard Cite

Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of 4H-SiC and on directed and selectively grown structures under growth-arresting or growth-enhancing masks. Recent developments in the growth of templated graphene nanostructures are also presented, as exemplified by tens of micron long very well confined and isolated 20-40nm wide graphene ribbons. Scheme for large scale integration of ribbon arrays with Si wafer is also presented.

show abstract

Controlled epitaxial graphene growth within removable amorphous carbon corrals

Cited by 16 publications

References 31 publications

Effect of Residual Gas Composition on Epitaxial Growth of Graphene on SiC

Effect of Residual Gas Composition on Epitaxial Growth of Graphene on SiC

Raman 2D Peak Line Shape in Epigraphene on SiC

Epitaxial Graphene on SiC: 2D Sheets, Selective Growth, and Nanoribbons

Contact Info

Product

Resources

About