Controlled deposition of plasma‐polyaniline thin film by PECVD: Understanding the influence of aniline to argon ratio

Abstract

Low pressure capacitively coupled radiofrequency plasmas operated in a mixture of aniline vapor and argon are used for the deposition of thin films on silicon substrates. The influence of the aniline vapor fraction in the gas mixture upon the plasma properties and the characteristics of the deposited thin film is analyzed. Plasmas diagnostics are carried out using mass spectrometry and optical emission spectroscopy and the thin films are characterized by means of Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and nearedge X-ray absorption fine-structure spectroscopy. Experiments highlight that the use of a low aniline/argon ratio leads to the deposition of an amorphous film whereas high-aniline/argon ratios allow the synthesis of a plasma polymer similar to polyaniline. The properties of such plasmas and the mechanisms involved in the deposition process are discussed in detail.

RETRACTED: Effect of Fluoride Layer Growth on the Deposition Rate under Different Microchannel Structures

“…This is because when the molecules have a longer residence time in the weakly ionized gaseous plasma, they have more time to dissociate into useful radicals . The residence time will affect the particle breaking process, as well as the formation of new chemical bonds. , In the article by Yasuda et al, the deposition rate initially increases and then decreases with an increase in the flow rate. Such a change in the deposition rate implies that the growth mode of the film changes from the mass transfer limited regime to the surface reaction limited regime due to the residence time .…”

“…This is because when the molecules have a longer residence time in the weakly ionized gaseous plasma, they have more time to dissociate into useful radicals. 32 The residence time will affect the particle breaking process, 33 as well as the formation of new chemical bonds. 34,35 In the article by Yasuda et al, 36 the deposition rate initially increases and then decreases with an increase in the flow rate.…”

Improvement of Electrical Conductivity of In Situ Iodine-Doped Polypyrrole Film Using Atmospheric Pressure Plasma Reactor with Capillary Electrodes

“…To synthesize CPs with excellent electrical properties using conventional plasma processes, doping is performed using materials such as iodine (I 2 ), chlorine, hydrogen chloride, and iron trichloride [ 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 ]. Many studies have directly injected I 2 into the reaction chamber during plasma polymerization using in situ techniques for both low-pressure and atmospheric-pressure (AP) plasmas [ 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 ]. To achieve high concentration and sufficient I 2 doping, the amount of I 2 vapor flow must be considerably increased during the polymer film growth [ 25 ].…”

Impedance matching design of capacitively coupled plasma with fluid and external circuit coupled model

“…[ 1,2 ] Therefore, it is widely used in material surface modification, plasma medicine, microelectronic etching, thin film deposition, sputtering, and other fields of industrial technology. [ 3–9 ] Plasma simulation calculations can provide comprehensive and detailed information on the parameters of the system, validating and complementing experimental diagnostics. It is also effective in the development of plasma devices and optimization of plasma conditions.…”