Atomic
layer deposition (ALD) allows for fine control over the
thickness, stoichiometry, and structural defects of materials. ALD
provides a suitable route to deposit lead halides, which can further
be converted to perovskites for photovoltaics, photoemission, and
photodetection, among other applications. Deposition of lead halides
by ALD has already begun to be explored; however, the precursors used
in published processes are highly hazardous, require expensive fabrication
processes, or contain impurities that can jeopardize the optoelectronic
properties of metal halide perovskites after conversion. In this work,
we deposited lead iodide (PbI2) by a facile ALD process
involving only two readily accessible and low-cost precursors. PbI2 nanocrystals were grown on soda-lime glass (SLG), silicon
dioxide support grids, and silicon wafer substrates and provided the
groundwork for further investigation into developing lead halide perovskite
processes by ALD. The ALD-grown PbI2 was characterized
by annular dark-field scanning transmission electron microscopy (ADF-STEM),
atomic force microscopy (AFM), high resolution transmission electron
microscopy (HRTEM), X-ray fluorescence (XRF), and X-ray photoemission
spectroscopy (XPS), among other methods. This work presents the first
step to synthesize lead halide perovskites with atomic control for
applications such as interfacial layers in photovoltaics and for deposition
in microcavities for lasing.