Controlled Coupling and Occupation of Silicon Atomic Quantum Dots at Room Temperature

Haider, Muhammad B.; Pitters, Jason; DiLabio, Gino A.; Livadaru, Lucian; Mutus, J.; Wolkow, Robert A.

doi:10.1103/physrevlett.102.046805

Cited by 218 publications

(247 citation statements)

References 22 publications

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“…Apart from GaAs technology, one can also realize our quantum cellular automata using the silicon atom dangling bonds on hydrogen terminated silicon crystal surface [23,24]. The four coupled QDs located in a ring, hosting two highly interacting electrons (fully capable for achieving our spin filtering dynamics) have been realized experimentally [24].…”

Section: Alternative Realizationmentioning

confidence: 99%

“…The four coupled QDs located in a ring, hosting two highly interacting electrons (fully capable for achieving our spin filtering dynamics) have been realized experimentally [24]. The isotopically purified silicon provides very long decoherence time (T 2 exceeding 200 µs) as the nuclear spin interaction is practically eliminated, and a charge dephasing time of ∼ 200ns has been measured for charge qubits in Si double QDs [25].…”

Section: Alternative Realizationmentioning

confidence: 99%

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Quantum dot spin cellular automata for realizing a quantum processor

Bayat

Creffield

Jefferson

et al. 2015

Semicond. Sci. Technol.

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Abstract. We show how single quantum dots, each hosting a singlet-triplet qubit, can be placed in arrays to build a spin quantum cellular automaton. A fast (∼ 10 ns) deterministic coherent singlet-triplet filtering, as opposed to current incoherent tunneling/slow-adiabatic based quantum gates (operation time ∼ 300 ns), can be employed to produce a two-qubit gate through capacitive (electrostatic) couplings that can operate over significant distances. This is the coherent version of the widely discussed charge and nano-magnet cellular automata, and would increase speed, reduce dissipation, and perform quantum computation while interfacing smoothly with its classical counterpart. This combines the best of two worlds -the coherence of spin pairs known from quantum technologies, and the strength and range of electrostatic couplings from the charge-based classical cellular automata. Significantly our system has zero electric dipole moment during the whole operation process, thereby increasing its charge dephasing time.

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Section: Alternative Realizationmentioning

confidence: 99%

Section: Alternative Realizationmentioning

confidence: 99%

Quantum dot spin cellular automata for realizing a quantum processor

Bayat

Creffield

Jefferson

et al. 2015

Semicond. Sci. Technol.

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show abstract

“…S canning tunnelling microscopy (STM) facilitates atomic-scale lithography by hydrogen resist patterning; the technique is especially useful for fundamental processes such as patterned oxidation 1 , metallization 2,3 , dopant incorporation 4 , templating of organic molecules 5,6 and fabrication of quantum cellular automata devices 7 , all at the atomic-scale. Sharpening of probes further extends to fi eld emitters 8 in displays and electron microscopes as well as razor blade manufacturing 9 .…”

mentioning

confidence: 99%

Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography

et al. 2012

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Fabrication of ultrasharp probes is of interest for many applications, including scanning probe microscopy and electron-stimulated patterning of surfaces. These techniques require reproducible ultrasharp metallic tips, yet the effi cient and reproducible fabrication of these consumable items has remained an elusive goal. Here we describe a novel biased-probe fi elddirected sputter sharpening technique applicable to conductive materials, which produces nanometer and sub-nanometer sharp W, Pt-Ir and W-HfB 2 tips able to perform atomic-scale lithography on Si. Compared with traditional probes fabricated by etching or conventional sputter erosion, fi eld-directed sputter sharpened probes have smaller radii and produce lithographic patterns 18 -26 % sharper with atomic-scale lithographic fi delity.

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“…Single [1,2], double [3][4][5], triple [6][7][8][9][10][11][12], and quadruple lateral gated quantum dot molecules in GaAlAs/GaAs heterojunctions or with dangling bonds on silicon surface have been demonstrated experimentally [13][14][15] and extensively studied theoretically [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31]. The capability to localize electrons in artificial lateral quantum dot molecules opens up the possibility of exploring the properties of the 1D Hubbard model, a model of strongly correlated electrons [32][33][34][35][36][37][38].…”

Section: Introductionmentioning

confidence: 99%

Electron-electron interactions, topological phase, and optical properties of a charged artificial benzene ring

et al. 2015

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/npsi/ctrl?action=rtdoc&an=21277409&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=21277409&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions?Contact the NRC Publications Archive team at PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1103/PhysRevB.92.245304Physical Review B -Condensed Matter and Materials Physics, 92, 24, 2015-12-08 PHYSICAL REVIEW B 92, 245304 (2015) Electron-electron interactions, topological phase, and optical properties of a charged artificial benzene ring We present a theory of the electronic and optical properties of a charged artificial benzene ring (ABR). The ABR is described by the extended Hubbard model solved using exact diagonalization methods in both real and Fourier space as a function of the tunneling matrix element t, Hubbard on-site repulsion U , and interdot interaction V . In the strongly interacting case, we discuss exact analytical results for the spectrum of the hole in a half-filled ABR dressed by the spin excitations of the remaining electrons. The spectrum is interpreted in terms of the appearance of a topological phase associated with an effective gauge field piercing through the ring. We show that the maximally spin-polarized (S = 5/2) and maximally spin-depolarized (S = 1/2) states are the lowest energy, orbitally nondegenerate, states. We discuss the evolution of the phase diagram and level crossings as interactions are switched off and the ground state becomes spin nondegenerate but orbitally degenerate S = 1/2. We present a theory of optical absorption spectra and show that the evolution of the ground and excited states, level crossings, and presence of artificial gauge can be detected optically.

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Controlled Coupling and Occupation of Silicon Atomic Quantum Dots at Room Temperature

Cited by 218 publications

References 22 publications

Quantum dot spin cellular automata for realizing a quantum processor

Quantum dot spin cellular automata for realizing a quantum processor

Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography

Electron-electron interactions, topological phase, and optical properties of a charged artificial benzene ring

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