2019
DOI: 10.1016/j.mtchem.2018.10.009
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Controlled chemical etching leads to efficient silicon–bismuth interface for photoelectrochemical CO2 reduction to formate

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Cited by 34 publications
(42 citation statements)
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“…It is worth noting that such values are higher than those measured for other Bi-modified Si photocathodes. [22,35] Moreover, the similarity between the LSV curves before and after electrolysis supports the good stability of the modified photocathode (Figure 4b). Such an electrochemical stability was not affected by post-electrolysis morphological changes of the initial structure to a dense array of Bi microsheets (Figure 1b) and the loss of a certain amount of the electrodeposited material (around 30 %), as supported by the decrease in the intensity of the Bi 4 f XPS signals (Figure 2a).…”
Section: Resultssupporting
confidence: 56%
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“…It is worth noting that such values are higher than those measured for other Bi-modified Si photocathodes. [22,35] Moreover, the similarity between the LSV curves before and after electrolysis supports the good stability of the modified photocathode (Figure 4b). Such an electrochemical stability was not affected by post-electrolysis morphological changes of the initial structure to a dense array of Bi microsheets (Figure 1b) and the loss of a certain amount of the electrodeposited material (around 30 %), as supported by the decrease in the intensity of the Bi 4 f XPS signals (Figure 2a).…”
Section: Resultssupporting
confidence: 56%
“…Such observations are fully consistent with those reported by Ding et al in the frame of their study of Bi 3 + -assisted chemical etching of planar Si. [35] The presence of Bi on Si was confirmed by EDS ( Figures S3-S5). Bi and Si were identified as the principal elemental components for all the freshly Bi-modified surfaces with a smaller Bi content for Si/Bi5, well in line with the SEM and optical observations.…”
Section: Resultsmentioning
confidence: 83%
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