Controlled carrier mean free path for the enhanced efficiency of
				III-nitride deep-ultraviolet light-emitting diodes

Jain, Barsha; Velpula, Ravi Teja; Patel, Moulik; Nguyen, Hieu Pham Trung

doi:10.1364/ao.418603

Cited by 5 publications

(4 citation statements)

References 30 publications

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“…This would improve the electron blocking capability in the active region and reduce the electron leakage into the p-region [4]. Moreover, the presence of concave QBs in LED 2 would slow down the hot electrons by lowering the electron MFP before entering into quantum wells in the active region which would play an additional role in reducing the electron leakage [19].…”

Section: Resultsmentioning

confidence: 99%

Advantages of concave quantum barriers in AlGaN deep ultraviolet light-emitting diodes

Jain

Muthu

Velpula

et al. 2023

Gallium Nitride Materials and Devices XVIII

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Although AlGaN-based deep ultraviolet (UV) light-emitting diodes (LEDs) have been studied extensively, their quantum efficiency and optical output power still remain extremely low compared to the InGaN-based visible color LEDs. Electron leakage has been identified as one of the most possible reasons for the low internal quantum efficiency (IQE) in AlGaN based UV LEDs. The integration of a p-doped AlGaN electron blocking layer (EBL) or/and increasing the conduction band barrier heights with prompt utilization of higher Al composition quantum barriers (QBs) in the LED could mitigate the electron leakage problem to an extent, but not completely. In this context, we introduce a promising approach to alleviate the electron overflow without using EBL by utilizing graded concave QBs instead of conventional QBs in AlGaN UV LEDs. Overall, the carrier transportation, confinement capability and radiative recombination are significantly improved. As a result, the IQE, and output power of the proposed concave QB LED were enhanced by ~25.4% and ~25.6% compared to the conventional LED for emission at ~254 nm, under 60 mA injection current.

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Section: Resultsmentioning

confidence: 99%

Advantages of concave quantum barriers in AlGaN deep ultraviolet light-emitting diodes

Jain

Muthu

Velpula

et al. 2023

Gallium Nitride Materials and Devices XVIII

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“…Through X-ray analysis, it showed no-peak the XRD pattern, indicating the remained bulk structure of the LAO lattice when integrating the ion dopant Dy 3+ . The event that ion Dy 3+ replaced the La 3+ site of the host could be attributed to their same charge by their ionic-radius percentage difference (Dir), as expressed [21],…”

Section: Wled Simulationmentioning

confidence: 99%

Blue-yellow emissive LaAlO3:Dy3+ phosphor for high bright white light-emitting diodes

Tung

Dang

2023

Bulletin EEI

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LaAlO3:Dy3+ (LAO:Dy3+) with blue-yellow emission for brilliant white light of light-emitting diodes (LEDs) was prepared using gel-combustion process. The chemical content of the created material was confirmed using energy dispersive X-ray analysis (EDX). The transmission electron microscopy was used to examine the phosphor crystal size and morphology. The luminescence analysis showed that LAO:Dy3+ phosphors exhibited peaks at 482 nm (blue) and 574 nm (yellow), attributed to the transitions 4F 9/2à6H 15/2 and 4F 9/2à6H 13/2, respectively. The investigating of correlated color temperature (CCT) and Commission International de L'Eclairage (CIE) described that the phosphor LAO:Dy3+ helped to attained good CCT coordination and bright cool-white emission under ultraviolet (UV) stimulation. However, when using in white LED fabrication, the concentration of LAO:Dy3+ should be modified to fulfill the need from manufactures. According to results from this work, the white light luminescence intensity and color rendering performance may be reduced if the LAO:Dy3+ is high (10%) because of too much scattering. On the other hand, such scattering improvements offered by LAO:Dy3+ phosphor is beneficial to reduce the color deviance for better color uniformity of light.

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“…Computing the activation energy of crystallization yields the reaction mechanism. SSON:Eu phosphors have earlier been examined, however just the luminescence and configuration characteristics were described [6], [7]. Research by Durmus and Davis [8] found that the heat quenching temperature of SSON:Eu is around 600 K. (327 °C).…”

Section: Introductionmentioning

confidence: 99%

Green SrSi2O2N2:Eu2+ phosphor for LED-phosphor applications: synthesis and characterization

Tung

Thi

2023

Bulletin EEI

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Green phosphors SrSi2O2N2:Eu2+ (SSON:Eu) are combined utilizing a simple solid-state reaction with SrSi2O2N2:Eu2+ like the forerunner. Various phosphor attributes were assessed following creation procedure. Differential thermal analysis (DTA) spectra and luminescence measurements are used to assess crystalline active power, electron-phonon conjunction, and heat quenching behavior. Because of their poor electron-phonon conjunction intensity (Huang-Rhys factor=4.2), SSON:Eu green phosphors have outstanding heating and color consistency. The heat quenching temperature (T50) of SSON:Eu is greater than 200 °C. SSON:Eu green phosphors have a wide stimulation range, strong heat steadiness and can absorb ultraviolet (UV) to blue energy and release green illumination, leading to the appropriate utilization in solid-state illumination and GaAsAl solar cells, according to the findings.

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Controlled carrier mean free path for the enhanced efficiency of III-nitride deep-ultraviolet light-emitting diodes

Cited by 5 publications

References 30 publications

Advantages of concave quantum barriers in AlGaN deep ultraviolet light-emitting diodes

Advantages of concave quantum barriers in AlGaN deep ultraviolet light-emitting diodes

Blue-yellow emissive LaAlO<sub>3</sub>:Dy<sup>3+</sup> phosphor for high bright white light-emitting diodes

Green SrSi<sub>2</sub>O<sub>2</sub>N<sub>2</sub>:Eu<sup>2+</sup> phosphor for LED-phosphor applications: synthesis and characterization

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