“…In 2 O 3 , an important transparent semiconductor with a wide direct band gap of 3.6 eV at room temperature, can be one of the most attractive conductive oxides for field emission because of its relatively low electron affinity, convenience of n-type doping, high chemical inertness, and sputter resistance [7]. Recently, nanostructures of In 2 O 3 have been paid considerable attention due to their aesthetic morphologies, novel characteristics, and important potential applications in various nanodevices [8][9][10][11]. Up to now, many methods have been applied to synthesize various In 2 O 3 nanostructures, such as nanowires, nanorods, nanobelts, nanotubes, nanoparticles, nanochains [12][13][14][15][16][17][18][19], etc.…”