Controllable synthesis of high-quality two-dimensional tellurium by a facile chemical vapor transport strategy

Zhao, Xinxin; Shi, Jianwei; Yin, Qin; Dong, Zhuo; Yan, Zhang; Kang, Lixing; Yu, Qiang; Chen, Cheng; Li, Jie; Liu, Xinfeng; Zhang, Kai

doi:10.1016/j.isci.2021.103594

Cited by 17 publications

(19 citation statements)

References 39 publications

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“…While the role of transition metals in several transition metal-based complexes including MTO has been already been studied, the role of tellurium (Te) in such compounds is still a paradox. Te, a chalcogenide high-Z element, has already provided great development potential in the fields of high-performance photodetectors, field effect transistors, and thermoelectric devices in recent years. , However, the similar device potential for transition metal-based tellurium oxide is still critical . Te-based compounds, in particular a combination of transition metals, Te, and oxygen (referred to here as tellurate, i.e., MTO), have recently been reported to be a growing material class owing to the higher electronic conductivity of Te.…”

Section: Introductionmentioning

confidence: 99%

Hydrothermal Synthesis of Ni₃TeO₆ and Cu₃TeO₆ Nanostructures for Magnetic and Photoconductivity Applications

Fernández-Català

Singh

Wang

et al. 2023

ACS Appl. Nano Mater.

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Despite great attention toward transition metal tellurates especially M3TeO6 (M = transition metal) in magnetoelectric applications, control on single phasic morphology-oriented growth of these tellurates at the nanoscale is still missing. Herein, a hydrothermal synthesis is performed to synthesize single-phased nanocrystals of two metal tellurates, i.e., Ni3TeO6 (NTO with average particle size ∼37 nm) and Cu3TeO6 (CTO ∼ 140 nm), using NaOH as an additive. This method favors the synthesis of pure NTO and CTO nanoparticles without the incorporation of Na at pH = 7 in MTO crystal structures such as Na2M2TeO6, as it happens in conventional synthesis approaches such as solid-state reaction and/or coprecipitation. Systematic characterization techniques utilizing in-house and synchrotron-based characterization methods for the morphological, structural, electronic, magnetic, and photoconductivity properties of nanomaterials showed the absence of Na in individual particulate single-phase MTO nanocrystals. Prepared MTO nanocrystals also exhibit slightly higher antiferromagnetic interactions (e.g., T N-NTO = 57 K and T N-CTO = 68 K) compared to previously reported MTO single crystals. Interestingly, NTO and CTO show not only a semiconducting nature but also photoconductivity. The proposed design scheme opens the door to any metal tellurates for controllable synthesis toward different applications. Moreover, the photoconductivity results of MTO nanomaterials prepared serve as a preliminary proof of concept for potential application as photodetectors.

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Section: Introductionmentioning

confidence: 99%

Hydrothermal Synthesis of Ni₃TeO₆ and Cu₃TeO₆ Nanostructures for Magnetic and Photoconductivity Applications

Fernández-Català

Singh

Wang

et al. 2023

ACS Appl. Nano Mater.

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“…Meanwhile, in view of the attained on-off ratio at room temperature, our device also exceeds most of the previous ultrathin tellurium transistors prepared by traditional vapor phase methods, including nanowires from chemical vapor deposition (CVD) and chemical vapor transportation (CVT), and also thermal evaporated thin films and hydrothermally grown nanowires, as indicated by the summary in Figure 5i. [21,35,[39][40][41][42][43]…”

Section: Resultsmentioning

confidence: 99%

“…[4,18] With its spiral chain-like anisotropic structure, trigonal phase Te is prone to appear in the form of nanowires from vapor phase growth. However, previously, the fabricated nanowires on various substrates (mica, [19][20][21] 2D materials, [22][23][24] etc.) displayed large diameter variation in the range of ≈50-100 nm, and a low on/off ratio <100 when applied to field-effect transistors.…”

mentioning

confidence: 99%

Programmable Nucleation and Growth of Ultrathin Tellurium Nanowires via a Pulsed Physical Vapor Deposition Design

Zhang

Ruan

et al. 2023

Adv Funct Materials

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Physical vapor deposition (PVD) methods have been widely employed for high‐quality crystal growth and thin‐film deposition in semiconductor electronics. However, the fabrication of emerging low dimensional nanostructures is hitherto challenging in conventional PVD systems due to their large thermal mass and near‐continuous operation which hinder flexible control of the nucleation and growth events. Herein, a pulsed PVD method is reported that features finely controllable temperature and heating time (down to milliseconds), which enables programming of the vapor supersaturation and decoupling of nucleation and growth events. Take tellurium as an example, the pulsed PVD allows transient source vaporization (≈1000 °C, 30 ms) for burst nucleation, followed by relatively low‐temperature volatilization (≈600 °C, 5 min) for steady‐state growth with well‐suppressed random nucleation. As a result, uniform and high‐density tellurium nanowires are obtained at the ultrathin thickness of sub‐10 nm and length >10 µm, which is in sharp contrast to the randomly formed nanostructures in conventional PVD. When used in the field‐effect transistor, the thin tellurium nanowires display a high on‐off ratio of >104 and hole mobility of ≈40 cm2 V−1 s−1, showing the potential for high‐performance electronics. Pulsed PVD therefore enables to flexibly program and finely tailor the nucleation and growth events during vapor phase deposition, which are otherwise impossible in conventional PVD.

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“…Various strategies were implemented to form Te nanostructures, such as solution-based approaches, liquid-phase exfoliation and vapor deposition. In the past decade, Te nanocrystals with a variety of dimensions, including zero dimension (0D), 52-55 one dimension (1D) [56][57][58][59][60][61][62] and two dimension (2D) [63][64][65][66][67][68][69] nanostructures have been successfully synthesized.…”

Section: Te Nanostructures and Their Thermoelectricsmentioning

confidence: 99%

Tellurium/polymers for flexible thermoelectrics: status and challenges

et al. 2023

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Controllable synthesis of high-quality two-dimensional tellurium by a facile chemical vapor transport strategy

Cited by 17 publications

References 39 publications

Hydrothermal Synthesis of Ni₃TeO₆ and Cu₃TeO₆ Nanostructures for Magnetic and Photoconductivity Applications

Hydrothermal Synthesis of Ni₃TeO₆ and Cu₃TeO₆ Nanostructures for Magnetic and Photoconductivity Applications

Programmable Nucleation and Growth of Ultrathin Tellurium Nanowires via a Pulsed Physical Vapor Deposition Design

Tellurium/polymers for flexible thermoelectrics: status and challenges

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Controllable synthesis of high-quality two-dimensional tellurium by a facile chemical vapor transport strategy

Cited by 17 publications

References 39 publications

Hydrothermal Synthesis of Ni3TeO6 and Cu3TeO6 Nanostructures for Magnetic and Photoconductivity Applications

Hydrothermal Synthesis of Ni3TeO6 and Cu3TeO6 Nanostructures for Magnetic and Photoconductivity Applications

Programmable Nucleation and Growth of Ultrathin Tellurium Nanowires via a Pulsed Physical Vapor Deposition Design

Tellurium/polymers for flexible thermoelectrics: status and challenges

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Hydrothermal Synthesis of Ni₃TeO₆ and Cu₃TeO₆ Nanostructures for Magnetic and Photoconductivity Applications

Hydrothermal Synthesis of Ni₃TeO₆ and Cu₃TeO₆ Nanostructures for Magnetic and Photoconductivity Applications