Controllable synthesis and surface modification of molybdenum oxide nanowires: a short review

Atinafu, Dimberu G.; Dong, Wenjun; Du, Minggang

doi:10.1007/s42864-020-00033-x

Cited by 28 publications

(10 citation statements)

References 54 publications

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“…For all these reasons, the wide bandgap of transparent devices remains a major constraint for achieving high photovoltaic conversion, primarily due to decreased carrier transport caused by excessive potential barriers. − Therefore, an easy and efficient modification approach is needed, such as metal/nonmetal doping, surface/interface microstructural modification, or other modifications. − For instance, Xu et al improved light life and carrier mobility through chlorine solubility, allowing for bandgap and stability adjustment . Among these approaches, interface quantum dot’s (QD) modification has gained attention due to its adjustable potential structure to match various p–n junction gradients and high quantum yield (QY) to increase carrier concentration. , Zhang et al used CsPbBr 3 /CsPbCl 3 QD to reduce energy loss at the double interface, as the QD’s interface layer improves film quality, energy structure, and charge transfer path .…”

Section: Introductionmentioning

confidence: 99%

CuI/BaSnO₃ Quantum Dot/ZnSnO₃ Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

Feng

Zhang

et al. 2023

ACS Appl. Nano Mater.

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Herein, the CuI/BaSnO3 quantum dot (QD)/ZnSnO3 perovskite-based transparent p–n junction was prepared using a hybrid approach involving sol–gel, freeze-drying, annealing, and sputtering. The resulting CuI/BaSnO3 QD/ZnSnO3 p–n junction exhibited a transmittance of ∼85% and a photovoltaic enhancement of ∼2.6 × 103 folds, resulting in a photovoltaic conversion efficiency of ∼1.13%. The p–n junction also demonstrated stable output over a 5-month cycle. This remarkable performance can be mainly attributed to the homologous perovskite BaSnO3 QD, which facilitated the attainment of an appropriate Fermi level and high quantum yield, optimizing carrier equilibrium while maintaining high transparency and providing better lattice matching. Furthermore, the presence of additional hole-related carriers caused by Cu vacancy allowed the effective utilization of defects to optimize kinetic equilibrium. Additionally, the intrinsic high physical and chemical stability of the inorganic perovskites BaSnO3 QD and ZnSnO3 could improve intrinsic stability.

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Section: Introductionmentioning

confidence: 99%

CuI/BaSnO₃ Quantum Dot/ZnSnO₃ Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

Feng

Zhang

et al. 2023

ACS Appl. Nano Mater.

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“…[13,14] Hence, conversion, [39,40] including the separation, transportation, and recombination. A series of effective methods have been reported, [41,42] including element doping, interface modification, or potential regulation, e.g., Yu et al have fabricated Ni-doped Cu 2 O films with remarkable p-type conductivity, [43] Negi groups have used the cobalt and nitrogen ions doping to regulate the structural, optical, and electrical properties. [44] Herein, the transition layer modification has attracted lots of attentions, because which can decrease the potential gradient to regulate potential structure, [45,46] while accelerating charge carrier transportation via interface modification.…”

Section: Introductionmentioning

confidence: 99%

“…Even so, the reported photovoltaic conversion efficiency is hardly to meet actual requirement, especially the carrier efficiency, has been the main bottleneck for photovoltaic conversion, [ 39,40 ] including the separation, transportation, and recombination. A series of effective methods have been reported, [ 41,42 ] including element doping, interface modification, or potential regulation, e.g., Yu et al. have fabricated Ni‐doped Cu 2 O films with remarkable p‐type conductivity, [ 43 ] Negi groups have used the cobalt and nitrogen ions doping to regulate the structural, optical, and electrical properties.…”

Section: Introductionmentioning

confidence: 99%

The NiO/CuInS₂ Quantum Dots/ZnO Orderly Nanoarrays Transparent Pn Junction Towards Enhanced Photovoltaic Conversion via Dual Functional CuInS₂ QDs

Pan

Niu

Xiao

et al. 2022

Adv Materials Inter

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the transparent photovoltaic device with perfect balance between transparency and photovoltaic conversion, is regarded as a desired candidate, [15][16][17] e.g., Lei and groups have reported a smart windows via transparent silver nanofiber. [18] Among these, ZnO is reported as a costefficient transparent semiconductor, [19] because which obtains decent transparency with wide bandgap (3.20-3.37 eV) and better intrinsic n-type conductivity, [20] including the easy modification is also irreplaceable reason for actual photovoltaic devices. For instance, Yang and groups have reported remarkable perovskite solar cells with PbS quantum dots (QDs) decorated ZnO electron transport layer, [21] Patel and groups have reported a hypersensitized transparent photovoltaic skin via ZnO, [22] etc. Especially, the ZnO-based orderly nanoarrays film has attracted lots of attentions for fabrication of transparent photovoltaic device, herein, the orderly arrays interval can increase the solar efficiency while maintaining the transparency via multiple reflections, and the nanorods can provide an excellent charge carrier transportation route to increase the conductivity, [23][24][25] e.g., Liu et al. have reported CuO/ZnO nanoarrays to achieve decent photoelectrochemical performance, [26] Su et al. have used ZnO/CdS/CuSbS 2 -based nanoarrays as excellent photoanode, [27] etc. Additionally, the ZnO-based nanoarrays with high Young's modulus can improve the physical stability of formed photovoltaic devices. [28,29] P-type semiconductor is another important issue, [30,31] including the potential and carrier dynamics factors. Now, a mass of p-type transparent materials are reported, [32,33] such as Cu 2 O, SnO, or CuAlO 2 , etc. Herein, due to the appropriate bandgap and better intrinsic p-type conductivity, the NiO is reported as a splendid option, [34,35] because the Ni 3+ ions caused by Ni vacancy can increase the hole-related carrier to improve p-type conductivity, e.g., Teng and groups have reported a remarkable UV photodetector based on NiO/TiO 2 , [36] Song and groups have reported remarkable NiO layer modified solar cells, [37] etc. Additionally, the presence of Ni 2+ /Ni 3+ caused by nonstoichiometric ratio and interval oxygen can increase the hole-related carrier further. [38] Even so, the reported photovoltaic conversion efficiency is hardly to meet actual requirement, especially the carrier efficiency, has been the main bottleneck for photovoltaicThe transparent pn junction of NiO/CuInS 2 quantum dots (QDs)/ZnO orderly nanoarrays has been fabricated via a hybrid approach of sputteringhydrothermal-chemical method. As revealed, the as-prepared NiO/CuInS 2 QDs/ZnO transparent pn junction exhibits decent transparency (≈85%), remarkable photovoltaic enhancement (≈2.5 × 10 3 folds, PCE of ≈1.19%) than that of intrinsic NiO/ZnO pn junction, and decent stability (4000s' cycle), which is attributed to that the dual functional CuInS 2 QDs with appropriate Fermi level, high QY, and wide bandgap, can optimize photogenerated carrier concentra...

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“…However, the efficient solar utilization while maintaining high transparency would be a significant issue for its actual applications [26,27] and lots of attempts have been tried, such as element doping and surface modification. Herein, the order nanoarrays would be a commendable method [28,29], and therefore the 1D nanoarray intervals can not only provide multiple diffuse reflections to increase solar efficiency but also provide adequate stress relief space to increase the stability, such as Yan groups have prepared the Ta 3 N 5 -Cu 2 O nanoarray heterojunction for improving photoelectrochemical performance [30] and Kuang groups have reported the TiO 2 /ZnO hybrid array-based quantum dot-sensitized solar cells with remarkable performance [31]. Additionally, the order nanoarrays can provide sufficient specific surface areas for modification [32].…”

Section: Introductionmentioning

confidence: 99%

A transparent photovoltaic device of NiO/MgO quantum dots/TiO2 arrays pn junction with carrier injection of MgO QDs

Pan

Niu

et al. 2021

J Mater Sci: Mater Electron

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A transparent photovoltaic device of NiO/MgO QDs/TiO 2 array pn junction was fabricated via a continuous hydrothermal-hydrolysis-sputtering method. Therefore, the TiO 2 arrays were prepared via a hydrothermal method, and the MgO QDs prepared by hydrolysis method were introduced on the surface of TiO 2 arrays. Subsequently, the NiO film was deposited on the surface of MgO QDs/TiO 2 arrays by sputtering. As revealed, the as-prepared transparent photovoltaic device exhibits a high transmittance of about * 80% in visible light, an obvious photovoltaic enhancement of about * 3 9 10 2 folds (PCE of 1.18%) than unmodified device, and decent stability during 3000 s' cycle, which can be mainly ascribed to that the MgO QDs with high quantum yield and appropriate potential can increase the charge carrier injection and assuage the potential gradient to improve the charge carriers efficiency, while maintaining the transparency. Additionally, the small size of MgO QDs can improve pn junction interface and the orderly arrays can increase solar efficiency.

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Controllable synthesis and surface modification of molybdenum oxide nanowires: a short review

Cited by 28 publications

References 54 publications

CuI/BaSnO₃ Quantum Dot/ZnSnO₃ Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

CuI/BaSnO₃ Quantum Dot/ZnSnO₃ Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

The NiO/CuInS₂ Quantum Dots/ZnO Orderly Nanoarrays Transparent Pn Junction Towards Enhanced Photovoltaic Conversion via Dual Functional CuInS₂ QDs

A transparent photovoltaic device of NiO/MgO quantum dots/TiO2 arrays pn junction with carrier injection of MgO QDs

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Controllable synthesis and surface modification of molybdenum oxide nanowires: a short review

Cited by 28 publications

References 54 publications

CuI/BaSnO3 Quantum Dot/ZnSnO3 Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

CuI/BaSnO3 Quantum Dot/ZnSnO3 Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

The NiO/CuInS2 Quantum Dots/ZnO Orderly Nanoarrays Transparent Pn Junction Towards Enhanced Photovoltaic Conversion via Dual Functional CuInS2 QDs

A transparent photovoltaic device of NiO/MgO quantum dots/TiO2 arrays pn junction with carrier injection of MgO QDs

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CuI/BaSnO₃ Quantum Dot/ZnSnO₃ Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

CuI/BaSnO₃ Quantum Dot/ZnSnO₃ Perovskite-based Transparent p–n Junction for Photovoltaic Enhancement

The NiO/CuInS₂ Quantum Dots/ZnO Orderly Nanoarrays Transparent Pn Junction Towards Enhanced Photovoltaic Conversion via Dual Functional CuInS₂ QDs