“…Semiconductor p–n heterojunctions are a basic building block for any optoelectronic and technological application. − It improves the charge separation as well as the carrier transport and hence increases the lifetime of carriers by preventing excitonic recombination, which is highly desirable for device applications. Among them, 1D (IV–VI) p-type tin sulfide (SnS) has emerged as one of the promising candidate for its numerous applications, including photovoltaics, photocatalysis, and next-generation energy storage devices, , owing to its unique properties such as high stability and tunable band gap, higher optical absorption coefficient (>10 4 cm –1 ), and nontoxic and earth abundant elements. , Moreover, 1D semiconductor heterostructures demonstrate a large surface-to-volume ratio, which provides a large number of active sites that results in outstanding photocatalytic, optoelectronic, and gas-sensing properties. − Recently, SnS has been widely used as an active absorber material in solar cell devices . However, pristine SnS frequently suffers from low charge separation efficiency and trapping of charge carriers, which seriously affect the practical application of photocatalysis.…”