Controllable preparation of SnO2 one-dimensional nanostructures by chemical vapor deposition

Abstract

Using Sn and SnO powder as source material, SnO2 one-dimensional nanostructures (nanowires, nanorods, nanobelt and nanoneedles) with controllable diameters were successfully prepared by chemical vapor deposition. The nanostructure and morphology of the products depend strongly on the proportion of oxygen in the growth chamber, which can be altered by adjusting the proportion of SnO in the source material or the proportion of oxygen in the carrier gas. It is crucial to adjust the relative contents of Sn and O atoms in the region of high temperature growth of the Si wafer during controlled preparation of SnO2 one-dimensional nanostructures. We will also discuss the growth mechanism of SnO2 one-dimensional nanostructures under different growth conditions.

Controlling the electronic structure of SnO2nanowires by Mo-doping

“…The experiment apparatus for chemical vapour deposition is similar to that described in our previous work. [17] A quartz tube (1200 mm in length and 25 mm in diameter) is located in a horizontal tube furnace and serves as a sample growth chamber. One end of this quartz tube is connected to the gas supply system and the other end to the vacuum system.…”