Controllable Magnetic Proximity Effect and Charge Transfer in 2D Semiconductor and Double‐Layered Perovskite Manganese Oxide van der Waals Heterostructure

configurations, which can be easily stacked layer-by-layer with varied twist angles to explore new physics. Interesting phenomena, like magnetic skyrmions features, [7,8] magnetic proximity effect, [9][10][11] superconductivity, [12][13][14][15][16] Mott insulators, [17,18] and quantum anomalous Hall effect, [19,20] have been extensively studied in vdW heterostructures.The exchange bias is reflected as a shift of the hysteresis loop of a ferromagnetic material along the magnetic field axis, which has been applied to spintronic devices for data storage. Exchange bias in antiferromagnet/ferromagnet, ferrimagnet/ferromagnet, and antiferromagnet/ferrimagnet heterostructures has been extensively studied for large exchange-bias fields. [21][22][23][24][25] However, it remains under explored in vdW magnets. Recently, exchange bias was reported in mechanically exfoliated CrCl 3 /Fe 3 GeTe 2 (FGT) heterostructrues (≈50 mT) at 2.5 K, [26] MnPS 3 /FGT samples, [27,28] gatedtuned FGT interlayers, [29] and naturally oxidized FGT. [30] Taking advantages of atomically thin 2D magnets, the spintronic devices based on exchange bias can be expanded to the atomic limit. In addition, the weak interlayer coupling in a vdW ferromagnet enables interface magnetic interactions to play prominent roles. Therefore, vdW materials offer a perfect platform for investigations of complex magnetic interactions at the interface that contributes to exchange bias. Among all the vdW magnets, FGT is a good candidate as it has a relatively high Curie temperature (T C ) close to room temperature [31,32] and a strong perpendicular magnetic anisotropy, which exhibits potential for magnetic recording and spintronics applications.In this work, we report a unique case of exchange bias in a vdW ferromagnet FGT interfacing with two different antiferromagnets, where one is CrSe with a noncollinear spin texture and the other one is oxidized FGT (O-FGT). Importantly, in this sandwiched O-FGT/FGT/CrSe heterostructure, the exchange bias from the anomalous Hall effect measurement shows a non-antisymmetric dependence (distinct absolute values of exchange bias for field coolings with same magnitude and opposite directions) and the obtained bias field reaches a maximum value of ≈90 mT at 5 K. In our case, two ferromagnet/ antiferromagnet interfaces are formed for generating exchange bias and producing a non-antisymmetric exchange bias. We utilize an intuitive physic model to explain the non-antisymmetric dependence of exchange bias on the cooling fields in this sandwiched ferromagnet FGT. This model is based on the interplay of exchange coupling at the O-FGT/FGT and FGT/ CrSe interfaces.Spintronics applications of thin-film magnets require control and design of specific magnetic properties. Exchange bias, originating from the pinning of spins in a ferromagnet by these of an antiferromagnet, is a part of the highly important elements for spintronics applications. Here, an exchange bias of ≈90 mT in a van der Waals ferromagnet encapsulated by two antiferromagnets at 5 K,...

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confidence: 99%

Manipulating Exchange Bias in a Van der Waals Ferromagnet

Wang

Pan

et al. 2022

Advanced Materials

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“…Proximity‐induced ferromagnetism and anisotropic spin texture were explored in the vdW heterostructures of the ferromagnetic insulator Cr 2 Ge 2 Te 6 and graphene (Figure 8(b)). 146 Such tuned magnetic proximity effects were also reported in the 2D graphene/CrBr 3 , 147 graphene/EuS, 148 MoS 2 /hBN/(La 0.8 Nd 0.2 ) 1.2 Sr 1.8 Mn 2 O 7 , 149 MoSe 2 /CrBr 3 , 150 and MoS 2 /Cr 2 O 3 151 heterostructures, holding potential applications in future spintronic and topological quantum devices.…”

Section: Two‐dimensional Magnetismmentioning

confidence: 55%

Computational design of two‐dimensional magnetic materials

Miao

Sun

2021

WIREs Comput Mol Sci

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As a long‐standing research topic in materials physics and chemistry, magnetic materials have been receiving increasing attention for their applications in spintronic devices, such as spin field‐effect transistor and data‐storage memory. Two‐dimensional (2D) magnets are a family of emerging magnetic materials with atomically thin thickness, which can be easily integrated into heterostructural devices, providing incredible possibility for understanding 2D magnetism and great potential for applications in future ultrathin spintronic devices. Recent effort from theory, simulations and experiments has made notable progress on 2D magnets and devices, especially on 2D van der Waals materials and heterojunctions. Here theoretical advances using physical models and computational approaches on the study of new 2D magnets and devices are briefly summarized and possible directions for future investigation are extensively discussed, which may inspire growing interest on the development and applications of 2D magnets and spintronic devices. This article is categorized under: Structure and Mechanism > Computational Materials Science Electronic Structure Theory > Density Functional Theory

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“…2 ) 1.2 Sr 1.8 Mn 2 O 7 ) with a hBN layer. Reproduced with permission from Wiley-VCH [ 146 ]. (e) Large valley-Zeeman splitting and polarization in monolayer MoSe 2 on perovskite Mn oxide.…”

Section: Physical Properties Of 25d Materialsmentioning

confidence: 99%

“…(e) Large valley-Zeeman splitting and polarization in monolayer MoSe 2 on perovskite Mn oxide. Reproduced with permission from Wiley-VCH [ 146 ]. (f) Schematic of the atomic arrangement in the moiré superlattice formed in a heterobilayer with twist angle θ .…”

Section: Physical Properties Of 25d Materialsmentioning

confidence: 99%

Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation

Ago

Okada

Miyata

et al. 2022

Science and Technology of Advanced Materials

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The past decades of materials science discoveries are the basis of our present society – from the foundation of semiconductor devices to the recent development of internet of things (IoT) technologies. These materials science developments have depended mainly on control of rigid chemical bonds, such as covalent and ionic bonds, in organic molecules and polymers, inorganic crystals and thin films. The recent discovery of graphene and other two-dimensional (2D) materials offers a novel approach to synthesizing materials by controlling their weak out-of-plane van der Waals (vdW) interactions. Artificial stacks of different types of 2D materials are a novel concept in materials synthesis, with the stacks not limited by rigid chemical bonds nor by lattice constants. This offers plenty of opportunities to explore new physics, chemistry, and engineering. An often-overlooked characteristic of vdW stacks is the well-defined 2D nanospace between the layers, which provides unique physical phenomena and a rich field for synthesis of novel materials. Applying the science of intercalation compounds to 2D materials provides new insights and expectations about the use of the vdW nanospace. We call this nascent field of science ‘2.5 dimensional (2.5D) materials,’ to acknowledge the important extra degree of freedom beyond 2D materials. 2.5D materials not only offer a new field of scientific research, but also contribute to the development of practical applications, and will lead to future social innovation. In this paper, we introduce the new scientific concept of this science of ‘2.5D materials’ and review recent research developments based on this new scientific concept.

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Controllable Magnetic Proximity Effect and Charge Transfer in 2D Semiconductor and Double‐Layered Perovskite Manganese Oxide van der Waals Heterostructure

Cited by 24 publications

References 59 publications

Manipulating Exchange Bias in a Van der Waals Ferromagnet

Manipulating Exchange Bias in a Van der Waals Ferromagnet

Computational design of two‐dimensional magnetic materials

Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation

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