Controllable Growth of Large–Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film

Lin, Ziyuan; Zhao, Yuda; Zhou, Changjian; Zhong, Ren; Wang, Xinsheng; Tsang, Yuen Hong; Chai, Yang

doi:10.1038/srep18596

Cited by 185 publications

(189 citation statements)

References 48 publications

(76 reference statements)

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“…The prospects for commercialization will depend on device reliability and means for low-cost and large-volume production. The growth of TMD monolayers has made large progress in recent years [117][118][119][120][121][122][123][124][125][126], but routes to control the chemical doping are still to be devised. Direct growth on plastic substrates does not seem feasible.…”

Section: Discussionmentioning

confidence: 99%

Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides

2016

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Abstract:We review the application of atomically thin transition metal dichalcogenides in optoelectronic devices. First, a brief overview of the optical properties of two-dimensional layered semiconductors is given and the role of excitons and valley dichroism in these materials are discussed. The following sections review and compare different concepts of photodetecting and light emitting devices, nanoscale lasers, single photon emitters, valleytronics devices, as well as photovoltaic cells. Lateral and vertical device layouts and different operation mechanisms are compared. An insight into the emerging field of valley-based optoelectronics is given. We conclude with a critical evaluation of the research area, where we discuss potential future applications and remaining challenges.

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Section: Discussionmentioning

confidence: 99%

Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides

2016

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“…There is great progress and it is possible to grow single layer high quality flakes with up to 300 µm in size covering a cm-sized substrate surface [117] . It is still challenging to avoid large gradients across the substrate and to grow homogenously connected single layer films with high crystal quality [19] .…”

Section: Fabricationmentioning

confidence: 99%

Light–matter interaction in transition metal dichalcogenides and their heterostructures

Wurstbauer¹,

Miller²,

Parzinger³

et al. 2017

J. Phys. D: Appl. Phys.

104

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Abstract:The investigation of two-dimensional van der Waals materials is a vibrant, fast moving and still growing interdisciplinary area of research. Two-dimensional van der Waals materials are truly two-dimensional crystals with strong covalent in-plane bonds and weak van der Waals interaction between the layers with a variety of different electronic, optical and mechanical properties. A very prominent class of twodimensional materials are transition metal dichalcogenides and amongst them particularly the semiconducting subclass. Their properties include bandgaps in the near-infrared to the visible range, decent charge carrier mobility together with high (photo-)catalytic and mechanical stability and exotic many body phenomena. These characteristics make the materials highly attractive for both fundamental research as well as innovative device applications. Furthermore, the materials exhibit a strong light matter interaction providing a high sun light absorbance of up to 15% in the monolayer limit, strong scattering cross section in Raman experiments and access to excitonic phenomena in van der Waals heterostructures. This review focuses on the light matter interaction in MoS2, WS2, MoSe2, and WSe2 that is dictated by the materials complex dielectric functions and on the multiplicity of studying the first order phonon modes by Raman spectroscopy to gain access to several material properties such as doping, strain, defects and temperature. Two-dimensional materials provide an interesting platform to stack them into van der Waals heterostructures without the limitation of lattice mismatch resulting in novel devices for application but also to study exotic many body interaction phenomena such as interlayer excitons. Future perspectives of semiconducting transition metal dichalcogenides and their heterostructures for applications in optoelectronic devices will be examined and routes to study emergent fundamental problems and manybody quantum phenomena under excitations with photons will be discussed.

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“…[22,23] To date, most of the MoS 2 films have been deposited on silicon dioxides [24] or sapphires and manually transferred to the p-Si substrates [25][26][27] to form HER catalysts. [22,23] To date, most of the MoS 2 films have been deposited on silicon dioxides [24] or sapphires and manually transferred to the p-Si substrates [25][26][27] to form HER catalysts.…”

mentioning

confidence: 99%

Directly Assembled 3D Molybdenum Disulfide on Silicon Wafer for Efficient Photoelectrochemical Water Reduction

Andoshe

Jin

Lee

et al. 2018

Advanced Sustainable Systems

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MoS2 composed of earth‐abundant elements is considered as a promising hydrogen evolution reaction (HER) catalyst for p‐type Si photocathode owing to its appropriate hydrogen adsorption free energy for the edge sites and high photochemical stability in acidic electrolytes. However, the direct synthesis of uniform and atomically thin MoS2 on Si by usual chemical vapor deposition techniques remains challenging because of the weak van der Waals interaction between Si and MoS2. Herein, by controlling the gas phase kinetics during metal–organic chemical vapor deposition, wafer‐scale direct synthesis of 3D MoS2 films on TiO2‐coated p‐type Si substrates is demonstrated. The 3D MoS2 layer with a number of edge sites exposed to ambient substantially reduces the HER overpotential of Si photocathode and simultaneously increases the saturation current density due to the antireflection effect. Directly grown 3D MoS2 thin films are stable under extended water reduction duration. The strategy paves the way for efficient assembly of transition metal disulfide HER catalysts on the p‐type photocathode.

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Controllable Growth of Large–Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film

Cited by 185 publications

References 48 publications

Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides

Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides

Light–matter interaction in transition metal dichalcogenides and their heterostructures

Directly Assembled 3D Molybdenum Disulfide on Silicon Wafer for Efficient Photoelectrochemical Water Reduction

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